Invention Grant
US09281062B2 Systems, and devices, and methods for programming a resistive memory cell
有权
系统和设备以及用于编程电阻式存储单元的方法
- Patent Title: Systems, and devices, and methods for programming a resistive memory cell
- Patent Title (中): 系统和设备以及用于编程电阻式存储单元的方法
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Application No.: US14335498Application Date: 2014-07-18
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Publication No.: US09281062B2Publication Date: 2016-03-08
- Inventor: Xiaonan Chen
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C13/00 ; G11C11/56
Abstract:
Embodiments disclosed herein may relate to programming a memory cell with a programming pulse that comprises a quenching period having different portions.
Public/Granted literature
- US20140328120A1 SYSTEMS, AND DEVICES, AND METHODS FOR PROGRAMMING A RESISTIVE MEMORY CELL Public/Granted day:2014-11-06
Information query
