Invention Grant
- Patent Title: Nonvolatile memory and related reprogramming method
- Patent Title (中): 非易失性存储器和相关重编程方法
-
Application No.: US14217538Application Date: 2014-03-18
-
Publication No.: US09281068B2Publication Date: 2016-03-08
- Inventor: Tae-Young Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2013-0059856 20130527
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10 ; G11C11/56 ; G11C16/34

Abstract:
A method of reprogramming a nonvolatile memory device, comprising setting up bit lines of selected memory cells according to logic values of first and second latches of a page buffer connected to the bit lines, supplying a program pulse to the selected memory cells, performing a program verify operation on the selected memory cells using the first and second latches, and performing a predictive program operation on the selected memory cells according to a result of the program verify operation. In the predictive program operation, bit lines of the selected memory cells are setup according to a logic value of a third latch of the page buffer that corresponds to each of the selected memory cells.
Public/Granted literature
- US20140351487A1 NONVOLATILE MEMORY AND RELATED REPROGRAMMING METHOD Public/Granted day:2014-11-27
Information query