Invention Grant
- Patent Title: Flash memory device and flash memory system including the same
- Patent Title (中): 闪存设备和闪存系统包括相同的
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Application No.: US14856261Application Date: 2015-09-16
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Publication No.: US09281072B2Publication Date: 2016-03-08
- Inventor: Kyeong-Han Lee , Seok-Cheon Kwon , Dong-Yang Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2008-0017956 20080227; KR10-2008-0061767 20080627
- Main IPC: G11C16/32
- IPC: G11C16/32 ; G11C7/22 ; G11C16/26 ; G11C16/08 ; G11C7/10

Abstract:
A flash memory device including: a memory cell array; a signal generator inputting a first data fetch signal and outputting a second data fetch signal; and an output buffer circuit configured to output data from the memory cell array in sync with rising and falling edges of the second data fetch signal, wherein second data fetch signal is output along with data output from the output buffer circuit.
Public/Granted literature
- US20160005484A1 FLASH MEMORY DEVICE AND FLASH MEMORY SYSTEM INCLUDING THE SAME Public/Granted day:2016-01-07
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