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US09281239B2 Biocompatible electrodes and methods of manufacturing biocompatible electrodes 有权
生物相容性电极和制造生物相容性电极的方法

  • Patent Title: Biocompatible electrodes and methods of manufacturing biocompatible electrodes
  • Patent Title (中): 生物相容性电极和制造生物相容性电极的方法
  • Application No.: US13126057
    Application Date: 2009-10-26
  • Publication No.: US09281239B2
    Publication Date: 2016-03-08
  • Inventor: Roel Daamen , Matthias Merz
  • Applicant: Roel Daamen , Matthias Merz
  • Applicant Address: NL Eindhoven
  • Assignee: NXP B.V.
  • Current Assignee: NXP B.V.
  • Current Assignee Address: NL Eindhoven
  • Priority: EP08105674 20081027
  • International Application: PCT/IB2009/054736 WO 20091026
  • International Announcement: WO2010/049881 WO 20100506
  • Main IPC: H01L21/4763
  • IPC: H01L21/4763 ;  H01L21/768 ;  H01L21/3213
Biocompatible electrodes and methods of manufacturing biocompatible electrodes
Abstract:
A biocompatible electrode is manufactured by depositing filling metal 36 and etching back the filling metal to the surface of the surrounding insulator 30. Then, a further etch forms a recess 38 at the top of the via 32. An electrode metal 40 is then deposited and etched back to fill the recess 38 and form biocompatible electrode 42. In this way, a planar biocompatible electrode is achieved. The step of etching to form the recess may be carried out in the same CMP tool as is used to etch back the filling metal 36. A hydrogen peroxide etch may be used.
Abstract(Chinese):

通过沉积填充金属36并将填充金属蚀刻回到周围绝缘体30的表面来制造生物相容性电极。然后，另外的蚀刻在通孔32的顶部形成凹部38.然后沉积电极金属40， 回蚀以填充凹部38并形成生物相容性电极42.以这种方式，实现平面生物相容性电极。 蚀刻形成凹部的步骤可以在与用于回填填充金属36相同的CMP工具中进行。可以使用过氧化氢蚀刻。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34 ...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46 ....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461 .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763 ......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）
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