发明授权
- 专利标题： Semiconductor device and method of manufacturing semiconductor device
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US14318064申请日： 2014-06-27
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公开(公告)号： US09281370B2公开(公告)日： 2016-03-08
- 发明人: Masahiro Nishi
- 申请人： Sumitomo Electric Device Innovations, Inc.
- 申请人地址： JP Yokohama-shi
- 专利权人： Sumitomo Electric Device Innovations, Inc.
- 当前专利权人： Sumitomo Electric Device Innovations, Inc.
- 当前专利权人地址： JP Yokohama-shi
- 代理机构： Venable LLP
- 代理商 Michael A. Sartori; Laura G. Remus
- 优先权： JP2013-137116 20130628
- 主分类号： H01L21/338
- IPC分类号： H01L21/338 ; H01L29/45 ; H01L21/285 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/20
摘要：
A manufacturing method according to an embodiment of this invention is a method of manufacturing a semiconductor device, which has: a first step of forming a first electrode 22 containing Ti or Ta on a top face of a nitride semiconductor layer 18; a second step of forming a second electrode 24 containing Al on a top face of the first electrode 22; a third step of forming a coating metal layer 26 covering at least one of an edge of a top face of the second electrode 24 and a side face of the second electrode 24, having a window 26a exposing the top face of the second electrode 24 in a region separated from the foregoing edge, and containing at least one of Ta, Mo, Pd, Ni, and Ti; and a step of performing a thermal treatment, after the third step.
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