Invention Grant
- Patent Title: Semiconductor device including an asymmetric feature
- Patent Title (中): 包括不对称特征的半导体器件
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Application No.: US14158539Application Date: 2014-01-17
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Publication No.: US09281397B2Publication Date: 2016-03-08
- Inventor: Josephine Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey Sleight
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Anthony Canale; Andrew M. Calderon
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/78 ; H01L27/088 ; H01L21/8234 ; H01L21/8238 ; H01L29/66
Abstract:
A semiconductor device (e.g., field effect transistor (FET)) having an asymmetric feature, includes a first gate formed on a substrate, first and second diffusion regions formed in the substrate on a side of the first gate, and first and second contacts which contact the first and second diffusion regions, respectively, the first contact being asymmetric with respect to the second contact.
Public/Granted literature
- US20140131708A1 SEMICONDUCTOR DEVICE INCLUDING AN ASYMMETRIC FEATURE, AND METHOD OF MAKING THE SAME Public/Granted day:2014-05-15
Information query
IPC分类:
