公开(公告)号：US09281397B2

公开(公告)日：2016-03-08

申请号：US14158539

申请日：2014-01-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Josephine Chang ,  Isaac Lauer ,  Chung-Hsun Lin ,  Jeffrey Sleight

IPC: H01L29/417 ,  H01L29/78 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L29/7835 ,  H01L21/823425 ,  H01L21/823475 ,  H01L21/823814 ,  H01L21/823871 ,  H01L27/088 ,  H01L29/41775 ,  H01L29/66659 ,  H01L29/7845

Abstract: A semiconductor device (e.g., field effect transistor (FET)) having an asymmetric feature, includes a first gate formed on a substrate, first and second diffusion regions formed in the substrate on a side of the first gate, and first and second contacts which contact the first and second diffusion regions, respectively, the first contact being asymmetric with respect to the second contact.

Abstract translation: 具有不对称特征的半导体器件（例如，场效应晶体管（FET））包括形成在衬底上的第一栅极，形成在第一栅极一侧的衬底中的第一和第二扩散区域以及第一和第二触点， 分别与第一和第二扩散区接触，第一触点相对于第二触点是不对称的。