发明授权
US09285271B2 Sloped structure, method for manufacturing sloped structure, and spectrum sensor
有权
斜坡结构,倾斜结构的制造方法和光谱传感器
- 专利标题: Sloped structure, method for manufacturing sloped structure, and spectrum sensor
- 专利标题(中): 斜坡结构,倾斜结构的制造方法和光谱传感器
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申请号: US14313122申请日: 2014-06-24
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公开(公告)号: US09285271B2公开(公告)日: 2016-03-15
- 发明人: Takahiko Yoshizawa
- 申请人: SEIKO EPSON CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: SEIKO EPSON CORPORATION
- 当前专利权人: SEIKO EPSON CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff PLC
- 优先权: JP2011-179646 20110819
- 主分类号: H01L31/0352
- IPC分类号: H01L31/0352 ; G01J3/02 ; H01L29/06 ; G01J3/36 ; G01J1/04 ; G02B5/20 ; G02B5/28 ; H01L31/0216 ; H01L31/0232 ; H01L31/0236 ; H01L31/18 ; G01J3/12
摘要:
A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film, the first film having a first portion connected to the substrate, a second portion located above the sacrificial film, a third portion located between the first portion and the second portion, and a thin region in a portion of the third portion or in a boundary section between the second portion and the third portion and having a thickness smaller than the first portion; (c) removing the sacrificial film; and (d) bending the first film in the thin region, after the step (c), thereby sloping the second portion of the first film with respect to the substrate.
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