Invention Grant
- Patent Title: Low-voltage IC test for defect screening
- Patent Title (中): 低压IC测试用于缺陷筛选
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Application No.: US13732482Application Date: 2013-01-02
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Publication No.: US09285417B2Publication Date: 2016-03-15
- Inventor: Daniel J. Poindexter , James M. Crafts , Karre M. Greene , Kenneth A. Lavallee , Keith C. Stevens
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Main IPC: G01R31/00
- IPC: G01R31/00 ; G01R31/28 ; H01L21/00 ; G01R31/30 ; H01L23/00

Abstract:
System and method using low voltage current measurements to measure voltage network currents in an integrated circuit (IC). In one aspect, a low voltage current leakage test is applied voltage networks for the IC or microchip via one or more IC chip connectors. One or multiple specifications are developed based on chip's circuit delay wherein a chip is aborted or sorted into a lesser reliability sort depending whether the chip fails specification. Alternately, a low voltage current leakage test begins an integrated circuit test flow. Then there is run a high voltage stress, and a second low voltage current leakage test is thereafter added. Then, there is compared the second low voltage test to the first low V test, and if the measured current is less on second test, this is indicative of a defect present which may result in either a scrap or downgrade reliability of chip.
Public/Granted literature
- US20140184262A1 LOW-VOLTAGE IC TEST FOR DEFECT SCREENING Public/Granted day:2014-07-03
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