A memory is provided that comprises a bank of non-volatile memory cells configured into a plurality of banklets. Each banklet in the plurality of banklets can be enabled separately and independently of the other banklets in the bank of non-volatile memory cells. The memory further comprises peripheral banklet circuitry, coupled to the bank of a non-volatile memory array, that is configured to enable selected subsets of bit lines within a selected banklet within the plurality of banklets. Moreover, the memory comprises banklet select circuitry, coupled to the peripheral banklet circuitry, that is configured to select data associated with a selected banklet for reading out from the banklet or writing to the banklet.