Invention Grant
- Patent Title: Memory devices
- Patent Title (中): 内存设备
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Application No.: US14061539Application Date: 2013-10-23
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Publication No.: US09286974B2Publication Date: 2016-03-15
- Inventor: Chih-Yang Chang , Chia-Fu Lee , Wen-Ting Chu , Yue-Der Chih
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H01L45/00

Abstract:
A device is disclosed that includes an I/O memory block. The I/O memory block includes memory cells, bit lines and a source line. The number of the formed bit lines is at least 4. The bit lines and the source line are electrically connected to the memory cells. In the I/O memory block, the source line and the bit lines are configured to provide logical data to the memory cells.
Public/Granted literature
- US20150109850A1 MEMORY DEVICES Public/Granted day:2015-04-23
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