发明授权
US09287131B2 Methods of patterning line-type features using a multiple patterning process that enables the use of tighter contact enclosure spacing rules
有权
使用能够使用更紧密的接触外壳间隔规则的多重图案化工艺来图案化线型特征的方法
- 专利标题： Methods of patterning line-type features using a multiple patterning process that enables the use of tighter contact enclosure spacing rules
- 专利标题（中）： 使用能够使用更紧密的接触外壳间隔规则的多重图案化工艺来图案化线型特征的方法
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申请号： US14186396申请日： 2014-02-21
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公开(公告)号： US09287131B2公开(公告)日： 2016-03-15
- 发明人: Lei Yuan , Jongwook Kye , Harry J. Levinson
- 申请人： GLOBALFOUNDRIES Inc.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Amerson Law Firm, PLLC
- 主分类号： G06F17/50
- IPC分类号： G06F17/50 ; H01L21/308 ; H01L21/306 ; H01L21/768 ; H01L21/027 ; H01L21/3213 ; G03F1/70 ; G03F7/00
摘要：
A method involving identifying a pattern for an overall target cut mask to be used in patterning line-type features that includes a target non-rectangular opening feature having an inner, concave corner, decomposing the overall target cut mask pattern into first and second sub-target patterns, wherein the first sub-target pattern comprises a first rectangular-shaped opening feature corresponding to a first portion, but not all, of the target non-rectangular opening feature and the second sub-target pattern comprises a second rectangular-shaped opening feature corresponding to a second portion, but not all, of the target non-rectangular opening feature, the first and second openings overlapping adjacent the inner, concave corner, and generating first and second sets of mask data corresponding to the first and second sub-target patterns, wherein at least one of the first and second sets of mask data is generated based upon an identified contact-to-end-of-cut-line spacing rule.
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