公开(公告)号：US09798852B2

公开(公告)日：2017-10-24

申请号：US15040235

申请日：2016-02-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Yuan ,  Jongwook Kye ,  Harry J. Levinson

IPC: G06F17/50 ,  H01L21/027

CPC classification number: G06F17/5081 ,  G06F2217/12 ,  H01L21/027

Abstract: Methods for performing design rule checking of a circuit design are provided. The methods include, for instance: providing a circuit design for an integrated circuit layer, in which the circuit design includes a plurality of design lines oriented in a particular direction; and automatically performing a design rule check of the circuit design, which may include forming a verification pattern for the circuit design, the verification pattern comprising a plurality of verification lines and a plurality of verification regions, wherein one or more verification regions are associated with and connected to one verification line of the plurality of verification lines, and checking the verification pattern for any verification line overlapping a verification region. The circuit design may be considered to fail the design rule check if an end of one verification line overlaps any verification region associated with another verification line of the verification pattern.

公开(公告)号：US20150113484A1

公开(公告)日：2015-04-23

申请号：US14578717

申请日：2014-12-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Yuan ,  Soo Han Choi ,  Jongwook Kye ,  Harry J. Levinson

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/70 ,  G06F17/5068

Abstract: One method disclosed herein involves, among other things, generating a set of mandrel mask rules, block mask rules and a virtual, software-based non-mandrel-metal mask. The method also includes creating a set of virtual non-mandrel mask rules that is a replica of the mandrel mask rules, generating a set of metal routing design rules based upon the mandrel mask rules, the block mask rules and the virtual non-mandrel mask rules, generating the circuit routing layout based upon the metal routing design rules, decomposing the circuit routing layout into a mandrel mask pattern and a block mask pattern, generating a first set of mask data corresponding to the mandrel mask pattern, and generating a second set of mask data corresponding to the block mask pattern.

Abstract translation: 本文公开的一种方法尤其涉及生成一组心轴掩模规则，块掩模规则和基于软件的虚拟金属掩模。 该方法还包括创建一组虚拟非心轴掩模规则，该规则是心轴掩模规则的副本，基于心轴掩模规则，块掩模规则和虚拟非心轴掩模生成一组金属路由设计规则 规则，基于金属路由设计规则生成电路布线布局，将电路路由布局分解为心轴掩模图案和块掩模图案，产生对应于心​​轴掩模图案的第一组掩模数据，以及生成第二组 对应于块掩模图案的掩模数据。

公开(公告)号：US20170323902A1

公开(公告)日：2017-11-09

申请号：US15149066

申请日：2016-05-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jia Zeng ,  Lei Yuan ,  Jongwook Kye ,  Harry J. Levinson

IPC: H01L27/118 ,  H01L27/092 ,  H01L23/528 ,  H01L21/3205 ,  H01L23/522 ,  H01L21/768 ,  H01L27/105 ,  H01L27/02

CPC classification number: H01L27/11807 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/0207 ,  H01L2027/11875

Abstract: At least one method, apparatus and system disclosed involves circuit layout for comprising a unidirectional metal layout. A first trench silicide (TS) formation is formed in a first active area of a functional cell. A first CA formation if formed above the first TS formation. A first vertical metal formation is formed in a first metal layer from the first active area to a second active area of the functional cell. The first vertical metal formation is formed offset relative to, and in contact with, the CA formation. A second TS formation is formed in a second active area of the functional cell. A second CA formation is formed above the second TS formation. The CA formation is formed offset the first vertical metal formation, operatively coupling the first and second active areas.

公开(公告)号：US09431300B1

公开(公告)日：2016-08-30

申请号：US14837222

申请日：2015-08-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jia Zeng ,  Jongwook Kye ,  Harry J. Levinson

IPC: H01L21/82 ,  H01L21/8234 ,  H01L23/528 ,  H01L23/522 ,  H01L29/66 ,  H01L27/088 ,  H01L29/45 ,  H01L21/00

CPC classification number: H01L21/823475 ,  H01L21/823437 ,  H01L23/485 ,  H01L23/528 ,  H01L23/5286 ,  H01L27/0207 ,  H01L27/088 ,  H01L2027/11875

Abstract: A method of forming an ultra-regular layout with unidirectional M1 metal line and the resulting device are disclosed. Embodiments include forming first and second vertical gate lines, spaced from and parallel to each other; forming a M1 metal line parallel to and between the first and second gate lines; forming first, second, and third M0 metal segments perpendicular to the M1 metal line; connecting the first M0 metal segment to the M1 metal line and the second gate line; connecting the second M0 metal segment to the first gate line and the second gate line; connecting the third M0 metal segment to the first gate line and the M1 metal line; forming a first gate cut on the first gate line between the second and third M0 metal segments; and forming a second gate cut on the second gate line between the first and second M0 segments.

Abstract translation: 公开了一种用单向M1金属线形成超规则布局的方法及其结果。 实施例包括形成彼此间隔开并平行的第一和第二垂直栅极线; 形成平行于第一和第二栅极线之间的M1金属线; 形成垂直于M1金属线的第一，第二和第三M0金属段; 将第一M0金属段连接到M1金属线和第二栅极线; 将所述第二M0金属段连接到所述第一栅极线和所述第二栅极线; 将第三M0金属段连接到第一栅极线和M1金属线; 在所述第二和第三M0金属段之间的第一栅极线上形成第一栅极切割; 以及在第一和第二M0段之间的第二栅极线上形成第二栅极切割。

公开(公告)号：US09287131B2

公开(公告)日：2016-03-15

申请号：US14186396

申请日：2014-02-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Yuan ,  Jongwook Kye ,  Harry J. Levinson

IPC: G06F17/50 ,  H01L21/308 ,  H01L21/306 ,  H01L21/768 ,  H01L21/027 ,  H01L21/3213 ,  G03F1/70 ,  G03F7/00

CPC classification number: H01L21/3088 ,  G03F1/70 ,  G03F7/0002 ,  G06F17/5068 ,  H01L21/0274 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/76877

Abstract: A method involving identifying a pattern for an overall target cut mask to be used in patterning line-type features that includes a target non-rectangular opening feature having an inner, concave corner, decomposing the overall target cut mask pattern into first and second sub-target patterns, wherein the first sub-target pattern comprises a first rectangular-shaped opening feature corresponding to a first portion, but not all, of the target non-rectangular opening feature and the second sub-target pattern comprises a second rectangular-shaped opening feature corresponding to a second portion, but not all, of the target non-rectangular opening feature, the first and second openings overlapping adjacent the inner, concave corner, and generating first and second sets of mask data corresponding to the first and second sub-target patterns, wherein at least one of the first and second sets of mask data is generated based upon an identified contact-to-end-of-cut-line spacing rule.

Abstract translation: 一种涉及识别用于构图线型特征的整体目标切割掩模的图案的方法，所述线型特征包括具有内凹角的目标非矩形开口特征，将总体目标切割掩模图案分解为第一和第二子图， 目标图案，其中所述第一子目标图案包括与所述目标非矩形开口特征和所述第二子目标图案的第一部分但不是全部相对应的第一矩形开口特征，所述第一子目标图案包括第二矩形开口特征， 特征对应于目标非矩形开口特征的第二部分但不是全部，第一和第二开口与内凹角相邻重叠，并且生成对应于第一和第二子图的第一和第二组掩模数据， 目标图案，其中基于所识别的切割线间距规则，生成第一组和第二组掩模数据中的至少一个。

公开(公告)号：US08954913B1

公开(公告)日：2015-02-10

申请号：US14043251

申请日：2013-10-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Yuan ,  Soo Han Choi ,  Jongwook Kye ,  Harry J. Levinson

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/70 ,  G06F17/5068

Abstract: One method disclosed herein involves, among other things, generating a set of mandrel mask rules, block mask rules and a virtual, software-based non-mandrel-metal mask. The method also includes creating a set of virtual non-mandrel mask rules that is a replica of the mandrel mask rules, generating a set of metal routing design rules based upon the mandrel mask rules, the block mask rules and the virtual non-mandrel mask rules, generating the circuit routing layout based upon the metal routing design rules, decomposing the circuit routing layout into a mandrel mask pattern and a block mask pattern, generating a first set of mask data corresponding to the mandrel mask pattern, and generating a second set of mask data corresponding to the block mask pattern.

Abstract translation: 本文公开的一种方法尤其涉及生成一组心轴掩模规则，块掩模规则和基于软件的虚拟金属掩模。 该方法还包括创建一组虚拟非心轴掩模规则，该规则是心轴掩模规则的副本，基于心轴掩模规则，块掩模规则和虚拟非心轴掩模生成一组金属路由设计规则 规则，基于金属路由设计规则生成电路布线布局，将电路路由布局分解为心轴掩模图案和块掩模图案，产生对应于心​​轴掩模图案的第一组掩模数据，以及生成第二组 对应于块掩模图案的掩模数据。

公开(公告)号：US09547232B2

公开(公告)日：2017-01-17

申请号：US14560688

申请日：2014-12-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Harry J. Levinson ,  Obert R. Wood, II

IPC: G03F1/22 ,  G03F1/62 ,  G03F1/64 ,  G03F7/20

CPC classification number: G03F1/64 ,  G03F1/22 ,  G03F1/62 ,  G03F7/70916

Abstract: Disclosed herein are various pellicles for use during extreme ultraviolet (EUV) photolithography processes. An EUV radiation device disclosed herein includes a reticle, a substrate support stage, a pellicle positioned between the reticle and the substrate support stage, wherein the pellicle includes an aerogel grid and a membrane formed on the aerogel grid, and a radiation source that is adapted to generate radiation at a wavelength of about 20 nm or less that is to be directed through the pellicle toward the reticle.

Abstract translation: 本文公开了在极紫外（EUV）光刻工艺中使用的各种薄膜。 本文公开的EUV辐射装置包括掩模版，衬底支撑台，位于掩模版和衬底支撑台之间的防护薄膜组件，其中防护薄膜组件包括形成在气凝胶格栅上的气凝胶格栅和膜，以及适于 以产生将要通过防护薄膜穿过掩模版的约20nm或更小的波长的辐射。

公开(公告)号：US20160161857A1

公开(公告)日：2016-06-09

申请号：US14560688

申请日：2014-12-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Harry J. Levinson ,  Obert R. Wood, II

IPC: G03F7/20 ,  G03F1/22

CPC classification number: G03F1/64 ,  G03F1/22 ,  G03F1/62 ,  G03F7/70916

Abstract: Disclosed herein are various pellicles for use during extreme ultraviolet (EUV) photolithography processes. An EUV radiation device disclosed herein includes a reticle, a substrate support stage, a pellicle positioned between the reticle and the substrate support stage, wherein the pellicle includes an aerogel grid and a membrane formed on the aerogel grid, and a radiation source that is adapted to generate radiation at a wavelength of about 20 nm or less that is to be directed through the pellicle toward the reticle.

Abstract translation: 本文公开了在极紫外（EUV）光刻工艺中使用的各种薄膜。 本文公开的EUV辐射装置包括掩模版，衬底支撑台，位于掩模版和衬底支撑台之间的防护薄膜组件，其中防护薄膜组件包括形成在气凝胶格栅上的气凝胶格栅和膜，以及适于 以产生将要通过防护薄膜穿过掩模版的约20nm或更小的波长的辐射。

公开(公告)号：US09905552B1

公开(公告)日：2018-02-27

申请号：US15238107

申请日：2016-08-16

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Yuan ,  Xuelian Zhu ,  Harry J. Levinson

IPC: H01L27/118 ,  H01L27/02 ,  H01L21/308 ,  H01L21/84 ,  H01L27/12 ,  G06F17/50

CPC classification number: H01L27/0207 ,  G06F17/5077 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/845 ,  H01L27/11803 ,  H01L27/1211

Abstract: A semiconductor structure includes a substrate having a plurality of semiconductor devices disposed therein. A dielectric layer is disposed over the substrate. A plurality of substantially parallel metal lines are disposed in the dielectric layer. The metal lines include active lines for routing signals to and from the devices, and dummy lines which do not route signals to and from the devices. Signal cuts are disposed in the active lines. The signal cuts define tips of the active lines. Assist cuts are disposed exclusively in the dummy lines and do not define tips of the active lines. The assist cuts are located proximate the signal cuts such that a first density of assist cuts and signal cuts in an area surrounding the signal cuts is substantially greater than a second density of signal cuts alone in the same area.

公开(公告)号：US09613177B2

公开(公告)日：2017-04-04

申请号：US14578717

申请日：2014-12-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Yuan ,  Soo Han Choi ,  Jongwook Kye ,  Harry J. Levinson

IPC: G06F17/50 ,  G03F1/70

CPC classification number: G06F17/5081 ,  G03F1/70 ,  G06F17/5068

Abstract: One method disclosed herein involves, among other things, generating a set of mandrel mask rules, block mask rules and a virtual, software-based non-mandrel-metal mask. The method also includes creating a set of virtual non-mandrel mask rules that is a replica of the mandrel mask rules, generating a set of metal routing design rules based upon the mandrel mask rules, the block mask rules and the virtual non-mandrel mask rules, generating the circuit routing layout based upon the metal routing design rules, decomposing the circuit routing layout into a mandrel mask pattern and a block mask pattern, generating a first set of mask data corresponding to the mandrel mask pattern, and generating a second set of mask data corresponding to the block mask pattern.