Invention Grant
- Patent Title: Substrate dividing method
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Application No.: US14793181Application Date: 2015-07-07
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Publication No.: US09287177B2Publication Date: 2016-03-15
- Inventor: Yoshimaro Fujii , Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2002-67289 20020312
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/78 ; H01L21/304 ; H01L23/00

Abstract:
A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
Public/Granted literature
- US09252056B2 Substrate dividing method Public/Granted day:2016-02-02
Information query
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