公开(公告)号：US10180525B2

公开(公告)日：2019-01-15

申请号：US15313195

申请日：2015-05-15

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Satoshi Yamamoto ,  Kenshi Fukumitsu

IPC分类号： F21V8/00 ,  F21S2/00 ,  G01N21/01 ,  G01N21/03 ,  G01N21/27 ,  G01N21/64 ,  G02B6/00 ,  B23K26/53 ,  B23K26/00 ,  B23K26/03 ,  G01N21/47 ,  G01N21/55 ,  G01N33/483 ,  A61B5/1455 ,  G01N21/25 ,  G01N21/49

摘要： An optical plate is an optical plate for irradiating a target with light, and includes a light input surface for inputting the light, a light output surface for outputting the light, a back surface opposite to the light output surface, and a light diffusion portion formed at least inside the optical plate by converging laser light, for diffusing the light. The light input surface is a surface between the light output surface and the back surface, and the light input from the light input surface is diffused in the light diffusion portion and output from the light output surface.

公开(公告)号：US09553023B2

公开(公告)日：2017-01-24

申请号：US15226284

申请日：2016-08-02

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC分类号： H01L21/00 ,  H01L21/78 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US08865566B2

公开(公告)日：2014-10-21

申请号：US13829683

申请日：2013-03-14

申请人： Hamamatsu Photonics K.K.

发明人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Ryuji Sugiura

IPC分类号： H01L21/00 ,  H01L21/263 ,  B23K26/00 ,  B23K26/08 ,  B23K26/40 ,  B28D1/22 ,  H01L21/683 ,  H01L21/78 ,  H01L23/00

CPC分类号： H01L21/2633 ,  B23K26/0853 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

摘要： Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.

摘要翻译： 产生多光子吸收，从而形成由于硅晶片11内的熔融处理区域13而被切割的部分9，然后，粘合到硅晶片11的粘合片20膨胀。 这样，将硅晶片11沿着要被切割的部分9以高精度切割成半导体芯片25.这里，相邻的半导体芯片25,25的相对的切割部分25a，25a从它们的紧密接触状态彼此分离 由此，沿着要切割的部分9也切割芯片接合树脂层23.因此，与硅晶片11和芯片接合树脂层23的情况相比，可以更有效地切割硅晶片11和芯片接合树脂层23。 11和芯片接合树脂层23用刀片切割而不切割基部21。

公开(公告)号：US20130252403A1

公开(公告)日：2013-09-26

申请号：US13829683

申请日：2013-03-14

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Ryuji Sugiura

IPC分类号： H01L21/263

CPC分类号： H01L21/2633 ,  B23K26/0853 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

摘要： Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.

摘要翻译： 产生多光子吸收，从而形成由于硅晶片11内的熔融处理区域13而被切割的部分9，然后，粘合到硅晶片11的粘合片20膨胀。 这样，将硅晶片11沿着要被切割的部分9以高精度切割成半导体芯片25.这里，相邻的半导体芯片25,25的相对的切割部分25a，25a从它们的紧密接触状态彼此分离 由此，沿着要切割的部分9也切割芯片接合树脂层23.因此，与硅晶片11和芯片接合树脂层23的情况相比，可以更有效地切割硅晶片11和芯片接合树脂层23。 11和芯片接合树脂层23用刀片切割而不切割基部21。

公开(公告)号：US11241757B2

公开(公告)日：2022-02-08

申请号：US16380660

申请日：2019-04-10

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Kazuhiro Atsumi ,  Koji Kuno ,  Masayoshi Kusunoki ,  Tatsuya Suzuki ,  Kenshi Fukumitsu ,  Fumitsugu Fukuyo

IPC分类号： B23K26/04 ,  B28D5/00 ,  H01L21/67 ,  B23K26/53 ,  B23K26/40 ,  B23K26/38 ,  B23K26/06 ,  B23K26/046 ,  H01L21/78 ,  B23K101/40 ,  B23K103/00

摘要： A laser processing method which can efficiently perform laser processing while minimizing the deviation of the converging point of a laser beam in end parts of an object to be processed is provided.
This laser processing method comprises a preparatory step of holding a lens at an initial position set such that a converging point is located at a predetermined position within the object; a first processing step (S11 and S12) of emitting a first laser beam for processing while holding the lens at the initial position, and moving the lens and the ltd object relative to each other along a main surface so as to form a modified region in one end part of a line to cut; and a second processing step (S13 and S14) of releasing the lens from being held at the initial position after forming the modified region in the one end part of the line to cut, and then moving the lens and the object relative to each other along the main surface while adjusting the gap between the lens and the main surface after the release, so as to form the modified region.

公开(公告)号：US09646816B2

公开(公告)日：2017-05-09

申请号：US15022222

申请日：2014-11-17

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Akinori Asai ,  Kenshi Fukumitsu

IPC分类号： H01J65/04 ,  H01J61/073 ,  G03F7/20

CPC分类号： H01J65/04 ,  G03F7/70025 ,  H01J61/025 ,  H01J61/0737 ,  H01J61/26 ,  H01J65/042

摘要： In a light source device, a control unit causes an energy density of a laser light in a lighting start region RS when a laser support light is maintained to be lower than an energy density of the laser light in the lighting start region RS when the laser support light is put on. For this reason, when the laser support light is maintained, a laser light L is radiated to the lighting start region RS at an energy density of a degree where sputtering does not occur. Therefore, in the light source device, because sputtering in a light emission sealing body can be suppressed, a sufficiently long life can be realized.

公开(公告)号：US09252056B2

公开(公告)日：2016-02-02

申请号：US14793181

申请日：2015-07-07

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC分类号： H01L21/00 ,  H01L21/78 ,  H01L21/304 ,  H01L23/00

摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US09142458B2

公开(公告)日：2015-09-22

申请号：US14517552

申请日：2014-10-17

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC分类号： H01L21/00 ,  H01L21/78 ,  H01L21/768 ,  B23K26/00 ,  B23K26/06 ,  B23K26/40 ,  B28D5/00 ,  H01L21/304 ,  H01L23/00

CPC分类号： H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US20150219980A1

公开(公告)日：2015-08-06

申请号：US14428854

申请日：2013-09-03

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Hiroshi Saito ,  Masatoshi Fujimoto ,  Shingo Oishi ,  Kenshi Fukumitsu

IPC分类号： G02F1/37 ,  G02F1/1337

CPC分类号： G02F1/37 ,  G02B5/3091 ,  G02F1/133553 ,  G02F1/1337 ,  G02F1/136277 ,  G02F1/292 ,  G02F1/3534 ,  G02F2203/18 ,  G03F7/70291

摘要： The device includes a spatial light modulation section having a phase modulation plane to which laser light L1 in a wavelength region longer than an ultraviolet region is input, and on which a phase of the laser light L1 is modulated at each of a plurality of two-dimensionally arrayed regions, to generate modulated laser light L2, a wavelength conversion section having a light incident plane which receives the modulated laser light L2 output from the spatial light modulation section, and converting a wavelength of the modulated laser light L2 into a wavelength in the ultraviolet region, and an image transfer optical system coupling the phase modulation plane of the spatial light modulation section and the light incident plane of the wavelength conversion section, so as to be optically conjugate systems to each other.

摘要翻译： 该装置包括：空间光调制部，具有输入比紫外线区域长的波长区域中的激光L1的相位调制面，激光L1的相位在多个二极管中的每一个被调制， 生成调制激光L2，具有光入射面的波长转换部，其接收从空间光调制部输出的调制激光L2，并将调制后的激光L2的波长转换为 以及将空间光调制部的相位调制面和波长转换部的光入射面耦合的图像传输光学系统，以便是彼此的光学共轭系统。

公开(公告)号：US10429720B2

公开(公告)日：2019-10-01

申请号：US14428854

申请日：2013-09-03

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Hiroshi Saito ,  Masatoshi Fujimoto ,  Shingo Oishi ,  Kenshi Fukumitsu

IPC分类号： G02F1/37 ,  G02B5/30 ,  G02F1/1337 ,  G02F1/1362 ,  G02F1/29 ,  G03F7/20 ,  G02F1/1335 ,  G02F1/35

摘要： The device includes a spatial light modulation section having a phase modulation plane to which laser light L1 in a wavelength region longer than an ultraviolet region is input, and on which a phase of the laser light L1 is modulated at each of a plurality of two-dimensionally arrayed regions, to generate modulated laser light L2, a wavelength conversion section having a light incident plane which receives the modulated laser light L2 output from the spatial light modulation section, and converting a wavelength of the modulated laser light L2 into a wavelength in the ultraviolet region, and an image transfer optical system coupling the phase modulation plane of the spatial light modulation section and the light incident plane of the wavelength conversion section, so as to be optically conjugate systems to each other.