发明授权
US09287179B2 Composite dummy gate with conformal polysilicon layer for FinFET device
有权
用于FinFET器件的具有适形多晶硅层的复合伪栅极
- 专利标题： Composite dummy gate with conformal polysilicon layer for FinFET device
- 专利标题（中）： 用于FinFET器件的具有适形多晶硅层的复合伪栅极
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申请号： US13353975申请日： 2012-01-19
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公开(公告)号： US09287179B2公开(公告)日： 2016-03-15
- 发明人: Yuan-Sheng Huang , Tzu-Yen Hsieh , Ming-Ching Chang , Chao-Cheng Chen , Chia-Jen Chen
- 申请人： Yuan-Sheng Huang , Tzu-Yen Hsieh , Ming-Ching Chang , Chao-Cheng Chen , Chia-Jen Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/8238 ; H01L29/66 ; H01L27/092
摘要：
The present disclosure involves a FinFET. The FinFET includes a fin structure formed over a substrate. A gate dielectric layer is least partially wrapped around a segment of the fin structure. The gate dielectric layer contains a high-k gate dielectric material. The FinFET includes a polysilicon layer conformally formed on the gate dielectric layer. The FinFET includes a metal gate electrode layer formed over the polysilicon layer. The present disclosure provides a method of fabricating a FinFET. The method includes providing a fin structure containing a semiconductor material. The method includes forming a gate dielectric layer over the fin structure, the gate dielectric layer being at least partially wrapped around the fin structure. The method includes forming a polysilicon layer over the gate dielectric layer, wherein the polysilicon layer is formed in a conformal manner. The method includes forming a dummy gate layer over the polysilicon layer.
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