公开(公告)号：US09287179B2

公开(公告)日：2016-03-15

申请号：US13353975

申请日：2012-01-19

Applicant: Yuan-Sheng Huang ,  Tzu-Yen Hsieh ,  Ming-Ching Chang ,  Chao-Cheng Chen ,  Chia-Jen Chen

Inventor： Yuan-Sheng Huang ,  Tzu-Yen Hsieh ,  Ming-Ching Chang ,  Chao-Cheng Chen ,  Chia-Jen Chen

IPC: H01L29/78 ,  H01L21/8238 ,  H01L29/66 ,  H01L27/092

CPC classification number: H01L29/66545 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823828 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/785

Abstract: The present disclosure involves a FinFET. The FinFET includes a fin structure formed over a substrate. A gate dielectric layer is least partially wrapped around a segment of the fin structure. The gate dielectric layer contains a high-k gate dielectric material. The FinFET includes a polysilicon layer conformally formed on the gate dielectric layer. The FinFET includes a metal gate electrode layer formed over the polysilicon layer. The present disclosure provides a method of fabricating a FinFET. The method includes providing a fin structure containing a semiconductor material. The method includes forming a gate dielectric layer over the fin structure, the gate dielectric layer being at least partially wrapped around the fin structure. The method includes forming a polysilicon layer over the gate dielectric layer, wherein the polysilicon layer is formed in a conformal manner. The method includes forming a dummy gate layer over the polysilicon layer.

Abstract translation: 本公开涉及FinFET。 FinFET包括在衬底上形成的翅片结构。 栅介质层最少部分地缠绕在翅片结构的一段上。 栅介质层包含高k栅介质材料。 FinFET包括在栅介质层上共形形成的多晶硅层。 FinFET包括在多晶硅层上形成的金属栅极电极层。 本公开提供了制造FinFET的方法。 该方法包括提供包含半导体材料的翅片结构。 该方法包括在鳍结构上方形成栅极电介质层，栅介质层至少部分地围绕翅片结构缠绕。 该方法包括在栅介质层上形成多晶硅层，其中多晶硅层以保形方式形成。 该方法包括在多晶硅层上形成伪栅极层。

公开(公告)号：US20130252425A1

公开(公告)日：2013-09-26

申请号：US13428923

申请日：2012-03-23

Applicant: Chih-Han LIN ,  Ming-Ching CHANG ,  Ryan Chia-Jen CHEN ,  Yih-Ann LIN ,  Jr-Jung LIN

Inventor： Chih-Han LIN ,  Ming-Ching CHANG ,  Ryan Chia-Jen CHEN ,  Yih-Ann LIN ,  Jr-Jung LIN

IPC: H01L21/3105 ,  H01L21/306

CPC classification number: H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76816

Abstract: A method includes providing a first mask pattern over a substrate, forming first spacers adjoining sidewalls of the first mask pattern, removing the first mask pattern, forming second spacers adjoining sidewalls of the first spacers, forming a filling layer over the substrate and between the second spacers, and forming a second mask pattern over the substrate.

Abstract translation: 一种方法包括在衬底上提供第一掩模图案，形成与第一掩模图案的侧壁相邻的第一间隔物，去除第一掩模图案，形成邻接第一间隔物的侧壁的第二间隔物，在衬底上形成填充层， 并且在衬底上形成第二掩模图案。

公开(公告)号：US20130152997A1

公开(公告)日：2013-06-20

申请号：US13329450

申请日：2011-12-19

Applicant: Yi Yao ,  Peter Tu ,  Ming-Ching Chang ,  Li Guan ,  Yan Tong

Inventor： Yi Yao ,  Peter Tu ,  Ming-Ching Chang ,  Li Guan ,  Yan Tong

IPC: G06K9/00 ,  H01L31/042

CPC classification number: G01W1/10 ,  F24S50/00 ,  F24S2201/00 ,  H01L31/02021 ,  Y02E10/40 ,  Y02E10/50

Abstract: An apparatus and method, as may be used for predicting solar irradiance variation, are provided. The apparatus may include a solar irradiance predictor processor (10) configured to process a sequence of images (e.g., sky images). The irradiance predictor processor may include a cloud classifier module (18) configured to classify respective pixels of an image of a cloud to indicate a solar irradiance-passing characteristic of at least a portion of the cloud. A cloud motion predictor (22) may be configured to predict motion of the cloud over a time horizon. An event predictor (24) may be configured to predict over the time horizon occurrence of a solar obscuration event. The prediction of the solar obscuration event may be based on the predicted motion of the cloud. The event predictor may include an irradiance variation prediction for the obscuration event based on the solar irradiance-passing characteristic of the cloud.

Abstract translation: 提供了可用于预测太阳辐照度变化的装置和方法。 该装置可以包括被配置为处理图像序列（例如，天空图像）的太阳辐照度预测器处理器（10）。 辐照度预测器处理器可以包括云分类器模块（18），其被配置为对云的图像的各个像素进行分类，以指示云的至少一部分的太阳辐射通过特性。 云运动预测器（22）可以被配置为预测云在时间范围内的运动。 事件预测器（24）可以被配置为在太阳遮挡事件的时间范围内发生预测。 太阳遮蔽事件的预测可以基于云的预测运动。 事件预测器可以包括基于云的太阳辐射通过特性的遮蔽事件的辐照度变化预测。

公开(公告)号：US20120108046A1

公开(公告)日：2012-05-03

申请号：US13281862

申请日：2011-10-26

Applicant: Yu Chao Lin ,  Ming-Ching Chang ,  Yih-Ann Lin ,  Ryan Chia-Jen Chen ,  Chao-Cheng Chen

Inventor： Yu Chao Lin ,  Ming-Ching Chang ,  Yih-Ann Lin ,  Ryan Chia-Jen Chen ,  Chao-Cheng Chen

IPC: H01L21/28 ,  H01L21/308

CPC classification number: H01L21/32139 ,  H01L21/0276 ,  H01L21/28194 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/823437 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a patternable layer over a substrate. The method includes forming a first layer over the patternable layer. The method includes forming a second layer over the first layer. The second layer is substantially thinner than the first layer. The method includes patterning the second layer with a photoresist material through a first etching process to form a patterned second layer. The method includes patterning the first layer with the patterned second layer through a second etching process to form a patterned first layer. The first and second layers have substantially different etching rates during the second etching process. The method includes patterning the patternable layer with the patterned first layer through a third etching process.

Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在衬底上形成可图案化层。 该方法包括在可图案层上形成第一层。 该方法包括在第一层上形成第二层。 第二层比第一层薄得多。 该方法包括通过第一蚀刻工艺用光致抗蚀剂材料图案化第二层以形成图案化的第二层。 该方法包括通过第二蚀刻工艺将具有图案化的第二层的第一层图案化以形成图案化的第一层。 第一和第二层在第二蚀刻工艺期间具有显着不同的蚀刻速率。 该方法包括通过第三蚀刻工艺对具有图案化的第一层的图案化层进行图案化。

公开(公告)号：US07989355B2

公开(公告)日：2011-08-02

申请号：US12370152

申请日：2009-02-12

Applicant: Ming-Feng Shieh ,  Shinn-Sheng Yu ,  Anthony Yen ,  Ming-Ching Chang ,  Jeff J. Xu

Inventor： Ming-Feng Shieh ,  Shinn-Sheng Yu ,  Anthony Yen ,  Ming-Ching Chang ,  Jeff J. Xu

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/3086 ,  H01L21/3088 ,  H01L21/823828 ,  H01L21/823871 ,  Y10S438/947

Abstract: The present disclosure provides a method of fabricating a semiconductor device that includes forming a mask layer over a substrate, forming a dummy layer having a first dummy feature and a second dummy feature over the mask layer, forming first and second spacer roofs to cover a top portion of the first and second dummy features, respectively, and forming first and second spacer sleeves to encircle side portions of the first and second dummy features, respectively, removing the first spacer roof and the first dummy feature while protecting the second dummy feature, removing a first end portion and a second end portion of the first spacer sleeve to form spacer fins, and patterning the mask layer using the spacer fins as a first mask element and the second dummy feature as a second mask element.

Abstract translation: 本公开提供了一种制造半导体器件的方法，该半导体器件包括在衬底上形成掩模层，在掩模层上形成具有第一虚拟特征和第二虚拟特征的虚设层，形成第一和第二间隔物顶部以覆盖顶部 分别形成第一和第二间隔套筒以分别围绕第一和第二虚拟特征的侧面部分，去除第一间隔物顶部和第一虚拟特征，同时保护第二虚拟特征，去除 第一间隔套筒的第一端部和第二端部，以形成间隔件翅片，并且使用间隔件翅片作为第一掩模元件并将第二虚拟特征图案化为掩模层作为第二掩模元件。

公开(公告)号：US07109085B2

公开(公告)日：2006-09-19

申请号：US11033912

申请日：2005-01-11

Applicant: Shiang-Bau Wang ,  Li-Te Lin ,  Ming-Ching Chang ,  Ryan Chia-Jen Chen ,  Yuan-Hung Chiu ,  Hun-Jan Tao

Inventor： Shiang-Bau Wang ,  Li-Te Lin ,  Ming-Ching Chang ,  Ryan Chia-Jen Chen ,  Yuan-Hung Chiu ,  Hun-Jan Tao

IPC: H01L21/336

CPC classification number: H01L21/32137 ,  H01L21/31116 ,  H01L21/823828

Abstract: A method for plasma assisted etching of a polysilicon containing gate electrode to reduce or avoid polysilicon notching at a base portion including providing a semiconducting substrate; forming a gate dielectric layer on the semiconducting substrate; forming a polysilicon layer on the gate dielectric; patterning a photoresist layer over the polysilicon layer for etching a gate electrode; carrying out a first plasma assisted etch process to etch through a major thickness portion of the polysilicon layer; carrying out a first inert gas plasma treatment; carrying out a second plasma assisted etch process to include exposing portions of the underlying gate dielectric layer; carrying out a second inert gas plasma treatment; and, carrying out a third plasma assisted etch process to fully expose the underlying gate dielectric layer adjacent either side of the gate electrodes.

Abstract translation: 一种用于等离子体辅助蚀刻含多晶硅栅电极的方法，以减少或避免在包括提供半导体衬底的基极部分处的多晶硅刻蚀; 在所述半导体衬底上形成栅介电层; 在栅极电介质上形成多晶硅层; 在多晶硅层上形成光致抗蚀剂层以蚀刻栅电极; 执行第一等离子体辅助蚀刻工艺以蚀刻通过多晶硅层的主要厚度部分; 进行第一惰性气体等离子体处理; 执行第二等离子体辅助蚀刻工艺以包括暴露下面的栅介电层的部分; 进行第二次惰性气体等离子体处理; 并且执行第三等离子体辅助蚀刻工艺以完全暴露邻近栅电极的任一侧的底层栅介质层。

公开(公告)号：US06686129B2

公开(公告)日：2004-02-03

申请号：US09975854

申请日：2001-10-11

Applicant: Ming-Ching Chang ,  Hun-Jan Tao

Inventor： Ming-Ching Chang ,  Hun-Jan Tao

IPC: G03F726

CPC classification number: H01L21/0332 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31144

Abstract: Partial photoresist etching is disclosed. A film on a semiconductor wafer includes a hard mask, doped polysilicon below the hard mask, undoped polysilicon below the doped polysilicon, and a stop layer below the undoped polysilicon. Photoresist etching is performed through the hard mask and the doped polysilicon by using a photoresist mask. After the photoresist mask is removed, photoresist-free etching is performed through the undoped polysilicon through to the stop layer by using the hard mask. A semiconductor device is disclosed that may be fabricated using this partial photoresist etching process.

Abstract translation: 公开了部分光致抗蚀剂蚀刻。 半导体晶片上的薄膜包括硬掩模，硬掩模下方的掺杂多晶硅，掺杂多晶硅下方的未掺杂多晶硅，以及未掺杂多晶硅之下的停止层。 通过使用光致抗蚀剂掩模，通过硬掩模和掺杂多晶硅进行光刻蚀蚀。 在去除光致抗蚀剂掩模之后，通过使用硬掩模，通过未掺杂的多晶硅通过至停止层进行无光致抗蚀剂的蚀刻。 公开了可以使用该部分光致抗蚀剂蚀刻工艺制造的半导体器件。

公开(公告)号：US06447814B1

公开(公告)日：2002-09-10

申请号：US09939593

申请日：2001-08-28

Applicant: Fang-Yu Lee ,  Huan Wu ,  Ming Ching Chang

Inventor： Fang-Yu Lee ,  Huan Wu ,  Ming Ching Chang

IPC: A01N6500

CPC classification number: A61K36/236 ,  A61K36/232 ,  A61K36/258 ,  A61K2300/00

Abstract: The present invention provides an herbal composition for improving blood circulation and treating patients with coronary heart diseases and stroke. The herbal composition comprises 30-50 wt % of Dang Gui root (Radix Angelicae sinensis), 35-65 wt % of Chuan Xiong root (Radix Ligustici Chuanxiong), and 7-13 wt % of Ginseng root (Radix Ginseng). The present invention also provides methods of preparing the same.

Abstract translation: 本发明提供一种用于改善血液循环并治疗患有冠心病和中风的患者的草药组合物。 草药组合物含有30-50％重量的当归（Angelicae sinensis），35-65％的川雄根（川i）和7-13％的人参（人参）。 本发明还提供了制备该方法的方法。

公开(公告)号：US08923567B2

公开(公告)日：2014-12-30

申请号：US13329450

申请日：2011-12-19

Applicant: Yi Yao ,  Peter Tu ,  Ming-Ching Chang ,  Li Guan ,  Yan Tong

Inventor： Yi Yao ,  Peter Tu ,  Ming-Ching Chang ,  Li Guan ,  Yan Tong

IPC: G06K9/00

CPC classification number: G01W1/10 ,  F24S50/00 ,  F24S2201/00 ,  H01L31/02021 ,  Y02E10/40 ,  Y02E10/50

Abstract: An apparatus and method, as may be used for predicting solar irradiance variation, are provided. The apparatus may include a solar irradiance predictor processor (10) configured to process a sequence of images (e.g., sky images). The irradiance predictor processor may include a cloud classifier module (18) configured to classify respective pixels of an image of a cloud to indicate a solar irradiance-passing characteristic of at least a portion of the cloud. A cloud motion predictor (22) may be configured to predict motion of the cloud over a time horizon. An event predictor (24) may be configured to predict over the time horizon occurrence of a solar obscuration event. The prediction of the solar obscuration event may be based on the predicted motion of the cloud. The event predictor may include an irradiance variation prediction for the obscuration event based on the solar irradiance-passing characteristic of the cloud.

Abstract translation: 提供了可用于预测太阳辐照度变化的装置和方法。 该装置可以包括被配置为处理图像序列（例如，天空图像）的太阳辐照度预测器处理器（10）。 辐照度预测器处理器可以包括云分类器模块（18），其被配置为对云的图像的各个像素进行分类，以指示云的至少一部分的太阳辐射通过特性。 云运动预测器（22）可以被配置为预测云在时间范围内的运动。 事件预测器（24）可以被配置为在太阳遮挡事件的时间范围内发生预测。 太阳遮蔽事件的预测可以基于云的预测运动。 事件预测器可以包括基于云的太阳辐射通过特性的遮蔽事件的辐照度变化预测。

公开(公告)号：US20140001559A1

公开(公告)日：2014-01-02

申请号：US13538734

申请日：2012-06-29

Applicant: Jr-Jung Lin ,  Chih-Han Lin ,  Ming-Ching Chang

Inventor： Jr-Jung Lin ,  Chih-Han Lin ,  Ming-Ching Chang

IPC: H01L27/088 ,  H01L21/283

CPC classification number: H01L29/66795 ,  H01L21/30604 ,  H01L21/823431 ,  H01L29/42372 ,  H01L29/66545 ,  H01L29/6681

Abstract: The disclosure relates to a dummy gate electrode of a semiconductor device. An embodiment comprises a substrate comprising a first surface; an insulation region covering a portion of the first surface, wherein the top of the insulation region defines a second surface; and a dummy gate electrode over the second surface, wherein the dummy gate electrode comprises a bottom and a base broader than the bottom, wherein a ratio of a width of the bottom to a width of the base is from about 0.5 to about 0.9.