Invention Grant
- Patent Title: Method for controlling magnetic properties through ion diffusion in a magnetic junction usable in spin transfer torque magnetic random access memory applications
- Patent Title (中): 用于通过离子扩散控制磁性能的方法，可用于自旋转移磁力随机存取存储器应用中的磁结
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Application No.: US14704341Application Date: 2015-05-05
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Publication No.: US09287322B2Publication Date: 2016-03-15
- Inventor: Roman Chepulskyy , Dmytro Apalkov
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Convergent Law Group LLP
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L27/22 ; H01L43/02 ; H01L43/08 ; H01L43/12
Abstract:
A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. The method includes providing a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the free and reference layers. An interface is between the nonmagnetic spacer and free layers. Providing the free layer further includes applying at least one electric field while the free layer is at a local temperature above an operating temperature of the magnetic junction. The electric field(s) exert a force on an anion in the free layer in a direction away from the interface between the free layer and the nonmagnetic spacer layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.
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