Invention Grant
- Patent Title: Light emitting diode and method of fabricating the same
- Patent Title (中): 发光二极管及其制造方法
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Application No.: US14791824Application Date: 2015-07-06
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Publication No.: US09287462B2Publication Date: 2016-03-15
- Inventor: Seom Geun Lee , Jong Kyu Kim , Yeo Jin Yoon , Jae Kwon Kim , Mae Yi Kim
- Applicant: SEOUL VIOSYS CO., LTD.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2012-0150388 20121221; KR10-2013-0029136 20130319; KR10-2013-0032481 20130327
- Main IPC: H01L29/18
- IPC: H01L29/18 ; H01L33/42 ; H01L33/62 ; H01L27/15 ; H01L33/08 ; H01L33/46 ; H01L33/14 ; H01L33/44

Abstract:
An exemplary embodiment discloses a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate, the first light emitting cell and the second light emitting cell being spaced apart from each other. The light emitting diode also includes a first zinc oxide (ZnO) layer disposed on the first light emitting cell, the first ZnO layer being electrically connected to the first light emitting cell. The light emitting diode also includes a current blocking layer disposed between a portion of the first light emitting cell and the first ZnO layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and a first side of insulation layer are connected to each other.
Public/Granted literature
- US20150311398A1 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-10-29
Information query
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