Invention Grant
US09290852B2 Light absorbing layer for photoelectrode structure, photoelectrode structure including the same, and photoelectrochemical cell including the photoelectrode structure
有权
用于光电极结构的光吸收层，包含该光电极结构的光电极结构和包括光电极结构的光电化学电池
- Patent Title: Light absorbing layer for photoelectrode structure, photoelectrode structure including the same, and photoelectrochemical cell including the photoelectrode structure
- Patent Title (中): 用于光电极结构的光吸收层，包含该光电极结构的光电极结构和包括光电极结构的光电化学电池
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Application No.: US14076355Application Date: 2013-11-11
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Publication No.: US09290852B2Publication Date: 2016-03-22
- Inventor: Jeong-hee Lee , Tae-gon Kim , Tae-hyung Kim , Seoung-jae Im
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2013-0020669 20130226
- Main IPC: C25B11/00
- IPC: C25B11/00 ; C25B11/04 ; C25B1/00 ; H01L31/0224
Abstract:
A light absorbing layer for a photoelectrode structure, the light absorbing layer including copper oxide, wherein metallic copper (Cu) is present at a grain boundary of the copper oxide. Also, a photoelectrode structure including the light absorbing layer, a photoelectrochemical cell including the photoelectrode structure, and a solar cell including the light absorbing layer.
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