Invention Grant
- Patent Title: X-ray photoemission microscope for integrated devices
- Patent Title (中): 用于集成器件的X射线照相显微镜
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Application No.: US13507895Application Date: 2012-08-03
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Publication No.: US09291578B2Publication Date: 2016-03-22
- Inventor: David L. Adler
- Applicant: David L. Adler
- Agent Franklin Schellenberg
- Main IPC: G21K7/00
- IPC: G21K7/00 ; G01N23/04

Abstract:
An apparatus is disclosed for the examination and inspection of integrated devices such as integrated circuits. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed. In some embodiments, the integrated device and photoemissive structure are independently mounted and controlled. In other embodiments, the photoemissive device is deposited directly onto the integrated device. In some embodiments, the incidence angle of the x-rays is varied to allow internal three-dimensional structures of the integrated device to be determined. In other embodiments, the recorded image is compared with a reference data to enable inspection for manufacturing quality control.
Public/Granted literature
- US20140037052A1 X-ray photoemission microscope for integrated devices Public/Granted day:2014-02-06
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