Invention Grant
US09293328B2 Semiconductor device structures comprising a polymer bonded to a base material and methods of fabrication
有权
包含结合到基底材料的聚合物和制造方法的半导体器件结构
- Patent Title: Semiconductor device structures comprising a polymer bonded to a base material and methods of fabrication
- Patent Title (中): 包含结合到基底材料的聚合物和制造方法的半导体器件结构
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Application No.: US14276204Application Date: 2014-05-13
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Publication No.: US09293328B2Publication Date: 2016-03-22
- Inventor: Dan B. Millward
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: G03F7/038
- IPC: G03F7/038 ; H01L21/033 ; H01L21/027 ; G03F7/039 ; G03F7/09 ; G03F7/11 ; G03F7/16 ; H01L29/02

Abstract:
Methods for adhering materials and methods for enhancing adhesion between materials are disclosed. In some embodiments, a polymer brush material is bonded to a base material, and a developable polymer resist material is applied over the grafted polymer brush material. The resist material is at least partially miscible in the grafted polymer brush material. As such, the resist material at least partially dissolves within the grafted polymer brush material to form an intertwined material of grafted polymer brush macromolecules and resist polymer macromolecules. Adhesion between the developable polymer resist and the base material may be thereby enhanced. Also disclosed are related semiconductor device structures.
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