发明授权
- 专利标题: Method for producing a semiconductor
- 专利标题(中): 半导体制造方法
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申请号: US14011832申请日: 2013-08-28
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公开(公告)号: US09293330B2公开(公告)日: 2016-03-22
- 发明人: Hans-Joachim Schulze , Ingo Muri , Friedrich Kroener , Werner Schustereder
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: INFINEON TECHNOLOGIES AG
- 当前专利权人: INFINEON TECHNOLOGIES AG
- 当前专利权人地址: DE Neubiberg
- 主分类号: H01L21/322
- IPC分类号: H01L21/322 ; H01L29/868 ; H01L21/265 ; H01L21/263 ; H01L21/324 ; H01L21/3063
摘要:
A method for producing a semiconductor is disclosed, the method having: providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body by a first implantation into the semiconductor body via the first side to a first depth location of the semiconductor body; and forming a p-doped zone in the semiconductor body by a second implantation into the semiconductor body via the second side to a second depth location of the semiconductor body, a pn-junction forming between said n-doped zone and said p-doped zone in the semiconductor body.
公开/授权文献
- US20150064890A1 METHOD FOR PRODUCING A SEMICONDUCTOR 公开/授权日:2015-03-05
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