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US09293401B2 Semiconductor device and method for forming a low profile embedded wafer level ball grid array molded laser package (EWLP-MLP) 有权
用于形成薄型嵌入式晶片级球栅阵列模制激光器封装(EWLP-MLP)的半导体器件和方法

Semiconductor device and method for forming a low profile embedded wafer level ball grid array molded laser package (EWLP-MLP)
Abstract:
A semiconductor device has a semiconductor die with an encapsulant deposited over and around the semiconductor die. An interconnect structure is formed over a first surface of the encapsulant. An opening is formed from a second surface of the encapsulant to the first surface of the encapsulant to expose a surface of the interconnect structure. A bump is formed recessed within the opening and disposed over the surface of the interconnect structure. A semiconductor package is provided. The semiconductor package is disposed over the second surface of the encapsulant and electrically connected to the bump. A plurality of interconnect structures is formed over the semiconductor package to electrically connect the semiconductor package to the bump. The semiconductor package includes a memory device. The semiconductor device includes a height less than 1 millimeter. The opening includes a tapered sidewall formed by laser direct ablation.
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