Invention Grant
- Patent Title: Semiconductor apparatus
- Patent Title (中): 半导体装置
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Application No.: US14508771Application Date: 2014-10-07
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Publication No.: US09293456B2Publication Date: 2016-03-22
- Inventor: Junichi Nita , Kazutaka Suzuki , Takahiro Korenari , Yoshimasa Uchinuma
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2013-234091 20131112
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/768 ; H01L21/8234 ; H01L27/02 ; H01L29/08
Abstract:
According to one embodiment, a semiconductor apparatus divides each of a first area in which a first transistor is formed and a second area in which a second transistor is formed into two or more areas, and alternately arranges the divided areas of the first area and the second area. Further, the semiconductor apparatus according to one embodiment configures the second area to have a total area larger than that of the first area or to have the number of divisions greater than that of the first area. Furthermore, in the semiconductor apparatus according to one embodiment, a gate pad of the first transistor and a gate pad of the second transistor are provided in the second area.
Public/Granted literature
- US20150129958A1 SEMICONDUCTOR APPARATUS Public/Granted day:2015-05-14
Information query
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