A method for inducing stress within the channel of a semiconductor fin structure includes forming a semiconductor fin on a substrate; forming a fin hard mask layer, multiple isolation regions, and multiple spacers, on the semiconductor fin; forming a gate structure on the semiconductor fin; and oxidizing multiple outer regions of the semiconductor fin to create oxidized stressors that induce compressive stress within the channel of the semiconductor fin. A method for inducing tensile stress within the channel of a semiconductor fin by oxidizing a central region of the semiconductor fin is also provided. Structures corresponding to the methods are also provided.