- 专利标题： Graphene devices and methods of manufacturing the same
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申请号： US14642326申请日： 2015-03-09
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公开(公告)号： US09293596B2公开(公告)日： 2016-03-22
- 发明人: Wenxu Xianyu , Chang-youl Moon , Jeong-yub Lee , Chang-seung Lee
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce
- 优先权： KR10-2011-0141706 20111223
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/66 ; H01L27/12 ; H01L29/16
摘要：
A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.
公开/授权文献
- US20150179814A1 GRAPHENE DEVICES AND METHODS OF MANUFACTURING THE SAME 公开/授权日：2015-06-25
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