发明授权
- 专利标题: Solar cell
- 专利标题(中): 太阳能电池
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申请号: US13565828申请日: 2012-08-03
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公开(公告)号: US09293614B2公开(公告)日: 2016-03-22
- 发明人: Min-Seok Oh , Doo-Youl Lee , Young-Jin Kim , Min Park , Yun-Seok Lee , Nam-Kyu Song , Dong-Seop Kim , Cho-Young Lee , Chan-Bin Mo , Young-Su Kim , Hoon-Ha Jeon , Yeon-Ik Jang , Jun-Ki Hong , Young-Sang Park , Chan-Yoon Jung
- 申请人: Min-Seok Oh , Doo-Youl Lee , Young-Jin Kim , Min Park , Yun-Seok Lee , Nam-Kyu Song , Dong-Seop Kim , Cho-Young Lee , Chan-Bin Mo , Young-Su Kim , Hoon-Ha Jeon , Yeon-Ik Jang , Jun-Ki Hong , Young-Sang Park , Chan-Yoon Jung
- 申请人地址: US VA McLean
- 专利权人: Intellectual Keystone Technology LLC
- 当前专利权人: Intellectual Keystone Technology LLC
- 当前专利权人地址: US VA McLean
- 代理机构: Sherr & Partners, PLLC
- 优先权: KR10-2011-0115943 20111108
- 主分类号: H01L31/0224
- IPC分类号: H01L31/0224 ; H01L31/0352 ; H01L31/05 ; H01L31/068 ; H01L31/0747
摘要:
A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.
公开/授权文献
- US20130112253A1 SOLAR CELL 公开/授权日:2013-05-09
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