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公开(公告)号:US20120097226A1
公开(公告)日:2012-04-26
申请号:US13159725
申请日:2011-06-14
申请人: HOON HA JEON , Min Seok OH , NAMKYU SONG , MIN PARK, , YEONIK JANG , Yun-Seok LEE , Cho-Young LEE
发明人: HOON HA JEON , Min Seok OH , NAMKYU SONG , MIN PARK, , YEONIK JANG , Yun-Seok LEE , Cho-Young LEE
IPC分类号: H01L31/06 , H01L31/0352
CPC分类号: H01L31/075 , H01L31/077 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要: A solar cell includes a semiconductor substrate including a first conductive type, a first amorphous silicon thin film layer disposed on the semiconductor substrate and a second amorphous silicon thin film layer including a second conductive type and disposed on the first amorphous silicon thin film layer. The first amorphous silicon thin film layer includes a first intrinsic silicon thin film layer, a second intrinsic silicon thin film layer facing the semiconductor substrate while interposing the first intrinsic silicon thin film layer therebetween and a first low concentration silicon thin film layer including the second conductive type and disposed between the first intrinsic silicon thin film layer and the second intrinsic silicon thin film layer.
摘要翻译: 太阳能电池包括:半导体衬底,包括第一导电类型,设置在半导体衬底上的第一非晶硅薄膜层和包括第二导电类型的第二非晶硅薄膜层,并设置在第一非晶硅薄膜层上。 第一非晶硅薄膜层包括第一本征硅薄膜层,面对半导体衬底的第二本征硅薄膜层,同时在其间插入第一本征硅薄膜层,以及第一低浓度硅薄膜层,其包括第二导电 并且设置在第一本征硅薄膜层和第二本征硅薄膜层之间。
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公开(公告)号:US20130112253A1
公开(公告)日:2013-05-09
申请号:US13565828
申请日:2012-08-03
申请人: Min-Seok OH , Doo-Youl Lee , Young-Jin KIM , Min PARK , Yun-Seok LEE , Nam-Kyu SONG , Dong-Seop KIM , Cho-Young LEE , Chan-Bin MO , Young-Su KIM , Hoon-Ha JEON , Yeon-Ik JANG , Jun-Ki HONG , Young-Sang PARK , Chan-Yoon JUNG
发明人: Min-Seok OH , Doo-Youl Lee , Young-Jin KIM , Min PARK , Yun-Seok LEE , Nam-Kyu SONG , Dong-Seop KIM , Cho-Young LEE , Chan-Bin MO , Young-Su KIM , Hoon-Ha JEON , Yeon-Ik JANG , Jun-Ki HONG , Young-Sang PARK , Chan-Yoon JUNG
IPC分类号: H01L31/076
CPC分类号: H01L31/03529 , H01L31/0224 , H01L31/022408 , H01L31/022425 , H01L31/022441 , H01L31/0516 , H01L31/0682 , H01L31/0747 , Y02E10/547
摘要: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.
摘要翻译: 一种太阳能电池,包括第一导电型半导体衬底; 在半导体衬底的前表面上的第一本征半导体层; 在所述第一本征半导体层的至少一个表面上的第一导电类型的第一半导体层; 在所述半导体衬底的背面上的第二导电型第二半导体层; 在所述第二半导体层和所述半导体衬底之间的第二本征半导体层; 在所述半导体衬底的背面上的第一导电型第三半导体层,所述第三半导体层与所述第二半导体层间隔开; 以及在第三半导体层和半导体衬底之间的第三本征半导体层。
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公开(公告)号:US09293614B2
公开(公告)日:2016-03-22
申请号:US13565828
申请日:2012-08-03
申请人: Min-Seok Oh , Doo-Youl Lee , Young-Jin Kim , Min Park , Yun-Seok Lee , Nam-Kyu Song , Dong-Seop Kim , Cho-Young Lee , Chan-Bin Mo , Young-Su Kim , Hoon-Ha Jeon , Yeon-Ik Jang , Jun-Ki Hong , Young-Sang Park , Chan-Yoon Jung
发明人: Min-Seok Oh , Doo-Youl Lee , Young-Jin Kim , Min Park , Yun-Seok Lee , Nam-Kyu Song , Dong-Seop Kim , Cho-Young Lee , Chan-Bin Mo , Young-Su Kim , Hoon-Ha Jeon , Yeon-Ik Jang , Jun-Ki Hong , Young-Sang Park , Chan-Yoon Jung
IPC分类号: H01L31/0224 , H01L31/0352 , H01L31/05 , H01L31/068 , H01L31/0747
CPC分类号: H01L31/03529 , H01L31/0224 , H01L31/022408 , H01L31/022425 , H01L31/022441 , H01L31/0516 , H01L31/0682 , H01L31/0747 , Y02E10/547
摘要: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.
摘要翻译: 一种太阳能电池,包括第一导电型半导体衬底; 在半导体衬底的前表面上的第一本征半导体层; 在所述第一本征半导体层的至少一个表面上的第一导电类型的第一半导体层; 在所述半导体衬底的背面上的第二导电型第二半导体层; 在所述第二半导体层和所述半导体衬底之间的第二本征半导体层; 在所述半导体衬底的背面上的第一导电型第三半导体层,所述第三半导体层与所述第二半导体层间隔开; 以及在第三半导体层和半导体衬底之间的第三本征半导体层。
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公开(公告)号:US20120291860A1
公开(公告)日:2012-11-22
申请号:US13472744
申请日:2012-05-16
申请人: Min PARK , Min-Seok OH , Yun-Seok LEE , Nam-Kyu SONG , Cho-Young LEE , Hoon-Ha JEON , Yeon-Ik JANG
发明人: Min PARK , Min-Seok OH , Yun-Seok LEE , Nam-Kyu SONG , Cho-Young LEE , Hoon-Ha JEON , Yeon-Ik JANG
IPC分类号: H01L31/0352 , H01L31/18 , H01L31/0224
CPC分类号: H01L31/1804 , H01L31/0682 , H01L31/0747 , Y02E10/547 , Y02P70/521
摘要: A solar cell includes a base substrate having a first surface and a second surface opposite the first surface, the base substrate including a crystalline semiconductor and being configured to have solar light incident on the first surface, a doping pattern on a first portion of the second surface, the doping pattern including a first dopant, a first doping layer on a second portion of the second surface, the first doping layer including a second dopant, and the first and second portions of the second surface being different from each other, a first electrode on the first doping layer, and a second electrode on the doping pattern.
摘要翻译: 太阳能电池包括具有第一表面和与第一表面相对的第二表面的基底基底,所述基底基底包括结晶半导体,并且被配置为具有入射在第一表面上的太阳光,在第二表面的第一部分上具有掺杂图案 表面,掺杂图案包括第一掺杂剂,第二表面的第二部分上的第一掺杂层,第一掺杂层包括第二掺杂剂,第二表面的第一和第二部分彼此不同,第一掺杂 第一掺杂层上的电极,以及掺杂图案上的第二电极。
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公开(公告)号:US20120234382A1
公开(公告)日:2012-09-20
申请号:US13293010
申请日:2011-11-09
申请人: Min PARK , Min-Seok Oh , Yun-Seok Lee , Nam-Kyu Song , Cho-Young Lee , Hoon-Ha Jeon , Yeon-Ik Jang
发明人: Min PARK , Min-Seok Oh , Yun-Seok Lee , Nam-Kyu Song , Cho-Young Lee , Hoon-Ha Jeon , Yeon-Ik Jang
IPC分类号: H01L31/0232 , H01L31/18
CPC分类号: H01L31/02366 , H01L31/03682 , H01L31/1804 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要: A solar cell and a method of manufacturing the solar cell, the solar cell including a first surface configured to receive incident sunlight and having a concavo-convex pattern, a substantially flat second surface opposite to the first surface, a first doped layer formed as a crystalline silicon layer having a first dopant, and a second doped layer formed as an amorphous silicon layer having a second dopant. The processes for forming these layers, with the exception of forming the first doped layer, are performed at a low temperature. Accordingly, reflectivity of sunlight may be minimized, a high terminal voltage may be generated, and a wafer including the solar cell can be kept from being bent.
摘要翻译: 一种太阳能电池和太阳能电池的制造方法,所述太阳能电池包括被配置为接收入射的太阳光并具有凹凸图案的第一表面,与所述第一表面相对的大致平坦的第二表面,形成为所述第一表面的第一掺杂层 具有第一掺杂剂的晶体硅层和形成为具有第二掺杂剂的非晶硅层的第二掺杂层。 除了形成第一掺杂层之外,形成这些层的工艺在低温下进行。 因此,可以将太阳光的反射率最小化,可能产生高的端子电压,并且可以防止包括太阳能电池的晶片弯曲。
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公开(公告)号:US20120199183A1
公开(公告)日:2012-08-09
申请号:US13271749
申请日:2011-10-12
申请人: Min Seok OH , Nam-Kyu Song , Min Park , Yeon-Ik Jang , Hoon Ha Jeon , Yun-Seok Lee , Cho-Young Lee
发明人: Min Seok OH , Nam-Kyu Song , Min Park , Yeon-Ik Jang , Hoon Ha Jeon , Yun-Seok Lee , Cho-Young Lee
CPC分类号: H01L31/202 , H01L31/02167 , H01L31/02363 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要: The solar cell includes a substrate, a semiconductor layer, a first doped pattern and a second doped pattern. The substrate has a first surface adapted to receive solar light and a second surface opposite to the first surface. The semiconductor layer includes an insulating pattern formed on a first area of the second surface of the substrate and a semiconductor pattern formed on a second area of the second surface of the substrate in which the insulating pattern is not formed. The first doped pattern and the second doped pattern are formed either in or on the semiconductor pattern.
摘要翻译: 太阳能电池包括衬底,半导体层,第一掺杂图案和第二掺杂图案。 衬底具有适于接收太阳光的第一表面和与第一表面相对的第二表面。 半导体层包括形成在基板的第二表面的第一区域上的绝缘图案和形成在其中未形成绝缘图案的基板的第二表面的第二区域上的半导体图案。 第一掺杂图案和第二掺杂图案形成在半导体图案中或其上。
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公开(公告)号:US20120103407A1
公开(公告)日:2012-05-03
申请号:US13079328
申请日:2011-04-04
申请人: Nam-Kyu SONG , Min-Seok OH , Min PARK , Yeon-Ik JANG , Hoon Ha JEON , Yun-Seok LEE , Cho-Young LEE
发明人: Nam-Kyu SONG , Min-Seok OH , Min PARK , Yeon-Ik JANG , Hoon Ha JEON , Yun-Seok LEE , Cho-Young LEE
IPC分类号: H01L31/0224 , H01L31/18 , H01L31/0216
CPC分类号: H01L31/022466 , H01L31/0747 , H01L31/077 , H01L31/1868 , H01L31/1884 , Y02E10/50 , Y02P70/521
摘要: An exemplary embodiment of the present invention provides a method for manufacturing a solar cell, which includes: forming a first semiconductor layer on a first surface of a light-absorbing layer, forming a second semiconductor layer on a second surface of the light-absorbing layer, forming a first transparent conductive layer having one X-ray diffraction peak on the first semiconductor layer in a first direction, forming a second transparent conductive layer having one X-ray diffraction peak on the second semiconductor layer in a second direction opposite to the first direction, forming a first electrode on the first transparent conductive layer in the first direction and forming a second electrode on the second transparent conductive layer in the second direction, in which at least one of the first transparent conductive layer and the second transparent conductive layer is formed at about 180 to about 220° C., at least one of the first transparent conductive layer and the second transparent conductive layer includes oxidized tungsten, and 2θ is 30.2±0.1 degrees in the X-ray diffraction peak.
摘要翻译: 本发明的一个示例性实施例提供了一种太阳能电池的制造方法,其包括:在光吸收层的第一表面上形成第一半导体层,在光吸收层的第二表面上形成第二半导体层 在第一方向上在第一半导体层上形成具有一个X射线衍射峰的第一透明导电层,在与第一半导体层相反的第二方向上在第二半导体层上形成具有一个X射线衍射峰的第二透明导电层 在第一方向上在第一透明导电层上形成第一电极,并在第二方向上在第二透明导电层上形成第二电极,其中第一透明导电层和第二透明导电层中的至少一个为 形成在约180至约220℃,第一透明导电层和第二tr中的至少一个 透明导电层包括氧化钨,和2& 在X射线衍射峰中为30.2±0.1度。
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