Method for manufacturing an electro-optical device

Invention Grant

US09293726B2 Method for manufacturing an electro-optical device 有权

Title translation: 电光装置的制造方法

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Patent Title: Method for manufacturing an electro-optical device
Patent Title (中): 电光装置的制造方法
Application No.: US14539117

Application Date: 2014-11-12
Publication No.: US09293726B2

Publication Date: 2016-03-22
Inventor: Shunpei Yamazaki , Jun Koyama , Kunitaka Yamamoto , Toshimitsu Konuma
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Applicant Address: JP Kanagawa-ken
Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Current Assignee Address: JP Kanagawa-ken
Agency: Nixon Peabody LLP
Agent Jeffrey L. Costellia
Priority: JP11-158813 19990604
Main IPC: H01L21/84
IPC: H01L21/84 ; H01L29/49 ; H01L29/40 ; H01L51/52 ; H01L27/32 ; H01L51/00 ; H01L27/12

Method for manufacturing an electro-optical device

Abstract:

An object of the present invention is to provide an EL display device having high operation performance and reliability.A third passivation film 45 is disposed under the EL element 203 comprising a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, and diffusion of alkali metals from the EL element 203 formed by inkjet method into TFTs is prevented. Further, the third passivation film 45 prevents penetration of moisture and oxygen from the TFTs, and suppress degradation of the EL element 203 by dispersing the heat generated by the EL element 203.

Abstract(Chinese):

本发明的目的是提供一种具有高操作性能和可靠性的EL显示装置。第三钝化膜45设置在包括像素电极（阳极）46，EL层47和阴极48的EL元件203的下面，并且防止了碱金属从喷墨法形成的EL元件203扩散到TFT中。此外，第三钝化膜45防止水分和氧从TFT渗透，并且通过分散由EL元件203产生的热量来抑制EL元件203的劣化。

Public/Granted literature

US20150069371A1 METHOD FOR MANUFACTURING AN ELECTRO-OPTICAL DEVICE Public/Granted day:2015-03-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84	.....衬底不是半导体的，例如绝缘体