Invention Grant
- Patent Title: Multigate resonant channel transistor
- Patent Title (中): 多谐振通道晶体管
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Application No.: US13994714Application Date: 2013-03-28
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Publication No.: US09294035B2Publication Date: 2016-03-22
- Inventor: Sasikanth Manipatruni , Raseong Kim , Rajashree Baskaran , Rajeev K. Dokania , Ian A. Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- International Application: PCT/US2013/034509 WO 20130328
- International Announcement: WO2014/158180 WO 20141002
- Main IPC: H03B5/12
- IPC: H03B5/12 ; H03B5/30 ; H01L29/66 ; H01L29/78

Abstract:
An embodiment includes an oscillator comprising an amplifier formed on a substrate; a multiple gate resonant channel array, formed on the substrate, including: (a) transistors including fins, each of the fins having a channel between source and drain nodes, coupled to common source and drain contacts; and (b) common first and second tri-gates coupled to each of the fins and located between the source and drain contacts; wherein the fins mechanically resonate at a first frequency when one of the first and second tri-gates is periodically activated to produce periodic downward forces on the fins. Other embodiments include a non planar transistor with a channel between the source and drain nodes and a tri-gate on the fin; wherein the fin mechanically resonates when the first tri-gate is periodically activated to produce periodic downward forces on the fin. Other embodiments are described herein.
Public/Granted literature
- US20140292429A1 MULTIGATE RESONANT CHANNEL TRANSISTOR Public/Granted day:2014-10-02
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