Invention Grant
- Patent Title: MEMS device with a stress-isolation structure
- Patent Title (中): 具有应力隔离结构的MEMS器件
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Application No.: US14172894Application Date: 2014-02-04
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Publication No.: US09296606B2Publication Date: 2016-03-29
- Inventor: Kirt Reed Williams , Matthew Julian Thompson , Joseph Seeger
- Applicant: INVENSENSE, INC.
- Applicant Address: US CA San Jose
- Assignee: INVENSENSE, INC.
- Current Assignee: INVENSENSE, INC.
- Current Assignee Address: US CA San Jose
- Agency: Minisandram Law Firm
- Agent Raghunath S. Minisandram
- Main IPC: G01P15/08
- IPC: G01P15/08 ; B81B3/00 ; G01N3/20 ; G01P15/125 ; B81C1/00 ; G01K1/00
Abstract:
A method and system for a MEMS device is disclosed. The MEMS device includes a free layer, with a first portion and a second portion. The MEMS device also includes a underlying substrate, the free layer movably positioned relative to the underlying substrate. The first portion and second portion of the free layer are coupled through at least one stem. A sense material is disposed over portions of the second portion of the free layer. Stress in the sense material and second portion of the free layer does not cause substantial deflection of the first portion.
Public/Granted literature
- US20150284239A1 MEMS DEVICE WITH A STRESS-ISOLATION STRUCTURE Public/Granted day:2015-10-08
Information query
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