发明授权
US09297645B2 Apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer
有权
用于确定突出到半导体晶片的表面中的具有高纵横比的区域的深度的装置和方法
- 专利标题： Apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer
- 专利标题（中）： 用于确定突出到半导体晶片的表面中的具有高纵横比的区域的深度的装置和方法
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申请号： US13440434申请日： 2012-04-05
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公开(公告)号： US09297645B2公开(公告)日： 2016-03-29
- 发明人: Martin Schönleber
- 申请人： Martin Schönleber
- 申请人地址： DE
- 专利权人： Precitec Optronik Gmbh
- 当前专利权人： Precitec Optronik Gmbh
- 当前专利权人地址： DE
- 代理机构： Taylor English Duma LLP
- 优先权： GB1105819.5 20110406
- 主分类号： G01B11/02
- IPC分类号： G01B11/02 ; G01B11/22 ; G01B9/02 ; H01L21/66
摘要：
An apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer are provided. The apparatus comprises a multi-wavelength light source, a semiconductor wafer holder for holding a semiconductor wafer, a head for directing the light source onto the semiconductor wafer, a spectrometer for collecting light comprising multiple wavelengths reflected from the semiconductor wafer and analysis means for determining a depth of the region from an interference pattern of light reflected from the semiconductor wafer by performing Fourier domain optical coherence tomography.
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