Optical measuring device
    2.
    发明授权

    公开(公告)号:US10725178B2

    公开(公告)日:2020-07-28

    申请号:US16550708

    申请日:2019-08-26

    发明人: Christoph Dietz

    IPC分类号: G01S17/46 G01B11/06

    摘要: A measuring device includes a light source that emits light of a plurality of wavelengths, in particular a continuous spectrum, a first confocal diaphragm, through which light from the light source passes, and an optical illuminating/imaging system having a first splitting optical element designed as a prism or grating. The optical illuminating/imaging system, which is designed such that the light enters the first splitting optical element collimated, includes a first lens system having at least one first lens that is spatially separated from the first splitting optical element, the effective focal length of the first lens system being significantly different for different wavelengths, and the optical illuminating/imaging system being designed such that focus points of different wavelengths are formed at different locations along a line segment. The measuring device is configured to measure an object that intersects with the line segment and reflects at least a part of the light.

    Monitoring apparatus and method for in-situ measurement of wafer thicknesses for monitoring the thinning of semiconductor wafers and thinning apparatus comprising a wet etching apparatus and a monitoring apparatus
    3.
    发明授权
    Monitoring apparatus and method for in-situ measurement of wafer thicknesses for monitoring the thinning of semiconductor wafers and thinning apparatus comprising a wet etching apparatus and a monitoring apparatus 有权
    用于原位测量晶片厚度的监测装置和方法,用于监测半导体晶片的薄化以及包括湿蚀刻装置和监测装置的变薄装置

    公开(公告)号:US08716039B2

    公开(公告)日:2014-05-06

    申请号:US13521736

    申请日:2011-01-10

    IPC分类号: H01L21/66 G01B11/06

    摘要: According to the invention, a monitoring device (12) is created for monitoring a thinning of at least one semiconductor wafer (4) in a wet etching unit (5), wherein the monitoring device (12) comprises a light source (14), which is designed to emit coherent light of a light wave band for which the semiconductor wafer (4) is optically transparent. The monitoring device (12) further comprises a measuring head (13), which is arranged contact-free with respect to a surface of the semiconductor wafer (4) to be etched, wherein the measuring head (13) is designed to irradiate the semiconductor wafer (4) with the coherent light of the light wave band and to receive radiation (16) reflected by the semiconductor wafer (4). Moreover, the monitoring device (12) comprises a spectrometer (17) and a beam splitter, via which the coherent light of the light wave band is directed to the measuring head (13) and the reflected radiation is directed to the spectrometer (17). The monitoring device (12) further comprises an evaluation unit (18), wherein the evaluation unit (18) is designed to determine a thickness d(t) of the semiconductor wafer (4) from the radiation (16) reflected by the semiconductor wafer (4) during thinning of the semiconductor wafer (4) by means of a method that is selected from the group consisting of a 1D-se FDOCT method, a 1D-te FDOCT method and a 1D-se TDOCT method.

    摘要翻译: 根据本发明,创建一种监测装置(12),用于监测湿式蚀刻单元(5)中的至少一个半导体晶片(4)的变薄,其中监测装置(12)包括光源(14), 其被设计为发射半导体晶片(4)光学透明的光波段的相干光。 监测装置(12)还包括相对于待蚀刻的半导体晶片(4)的表面非接触地布置的测量头(13),其中测量头(13)被设计成照射半导体 晶片(4)与光波段的相干光并且接收由半导体晶片(4)反射的辐射(16)。 此外,监视装置(12)包括光谱仪(17)和分束器,光波段的相干光通过该分光器被引导到测量头(13),反射的辐射被引导到光谱仪(17) 。 监测装置(12)还包括评估单元(18),其中评估单元(18)被设计成从由半导体晶片反射的辐射(16)确定半导体晶片(4)的厚度d(t) (4)在通过选自1D-se FDOCT法,1D-te FDOCT法和1D-se TDOCT法的方法来减薄半导体晶片(4)期间。

    Apparatus and method for monitoring a thickness of a silicon wafer with a highly doped layer
    4.
    发明授权
    Apparatus and method for monitoring a thickness of a silicon wafer with a highly doped layer 有权
    用高度掺杂层监测硅晶片的厚度的装置和方法

    公开(公告)号:US08699038B2

    公开(公告)日:2014-04-15

    申请号:US13046063

    申请日:2011-03-11

    IPC分类号: G01B11/28

    摘要: Apparatus for monitoring a thickness of a silicon wafer with a highly-doped layer at least at a backside of the silicon wafer is provided. The apparatus has a source configured to emit coherent light of multiple, wavelengths. Moreover, the apparatus comprises a measuring head configured to be contactlessly positioned adjacent the silicon wafer and configured to illuminate at least a portion of the silicon wafer with the coherent light and to receive at least a portion of radiation reflected by the silicon wafer. Additionally, the apparatus comprises a spectrometer, a beam splitter and an evaluation device. The evaluation device is configured to determine a thickness of the silicon wafer by analyzing the radiation reflected by the silicon wafer by an optical coherence tomography process. The coherent light is emitted multiple wavelengths in a bandwidth b around a central wavelength wc.

    摘要翻译: 提供了用于至少在硅晶片背面监测具有高掺杂层的硅晶片厚度的装置。 该装置具有被配置为发射多个波长的相干光的源。 此外,该装置包括测量头,其被配置为与硅晶片相邻地非接触地定位,并被配置为用相干光照射至少一部分硅晶片,并且接收由硅晶片反射的辐射的至少一部分。 另外,该装置包括光谱仪,分束器和评估装置。 评估装置被配置为通过光学相干断层摄影处理来分析由硅晶片反射的辐射来确定硅晶片的厚度。 相干光在围绕中心波长wc的带宽b中发射多个波长。

    TEST DEVICE FOR TESTING A BONDING LAYER BETWEEN WAFER-SHAPED SAMPLES AND TEST PROCESS FOR TESTING THE BONDING LAYER
    5.
    发明申请
    TEST DEVICE FOR TESTING A BONDING LAYER BETWEEN WAFER-SHAPED SAMPLES AND TEST PROCESS FOR TESTING THE BONDING LAYER 有权
    用于测试波形样品之间的粘结层的测试装置和用于测试粘结层的测试过程

    公开(公告)号:US20120320380A1

    公开(公告)日:2012-12-20

    申请号:US13525184

    申请日:2012-06-15

    IPC分类号: G01B9/02

    摘要: The invention relates to a test device for testing a bonding layer between wafer-shaped samples and a test process for testing the bonding layer. The test device comprises a measuring head for an OCT process that is configured to direct an optical measuring beam at a composite comprising at least two wafer-shaped samples with a bonding layer positioned between them. An optical beam splitter is configured to divert an optical reference beam as a reference arm for distance measurements. An evaluation unit is configured to evaluate layer thickness measurements without a reference arm and distance measurements with a reference arm. An optical switch device is configured to connect and disconnect the reference arm.

    摘要翻译: 本发明涉及一种用于测试晶片形样品之间的接合层的测试装置和用于测试接合层的测试方法。 测试装置包括用于OCT工艺的测量头,其被配置为将光学测量光束引导到包括至少两个晶片状样品的复合体,其中位于它们之间的结合层。 光束分离器被配置为转移用作距离测量的参考臂的光学参考光束。 评估单元被配置为评估层厚度测量,而不用参考臂和参考臂进行距离测量。 光开关装置被配置为连接和断开参考臂。

    Device and method for optically measuring a measurement object

    公开(公告)号:US10228551B1

    公开(公告)日:2019-03-12

    申请号:US16056928

    申请日:2018-08-07

    IPC分类号: G02B21/00 G01B11/24 G01B11/06

    摘要: A chromatic confocal measuring device includes a light source, which emits light of a plurality of wavelengths, and a first beam splitter, via which the light from the light source into an imaging optical unit having chromatic aberration on. Light reflected from the measurement object is imaged by the imaging optical unit and the first beam splitter onto a first confocal detection stop arrangement, such that the first confocal detection stop arrangement functions as a confocal aperture. Light incident through the first detection stop arrangement is detected and evaluated by a first detection device. The measuring device has a first slit stop, which functions as a confocal aperture of the measuring device. The measuring device additionally includes a second detection device and a second beam splitter, wherein the second beam splitter splits the light reflected from the measurement object into a first and a second partial beam, which image the same spatial region of the measurement object. The first detection device detects light of the first partial beam by a linear detector and evaluates total intensities over all wavelengths in order to create a total intensity profile and/or a total intensity image therefrom. The second detection device at the same time spectrally splits light of the second partial beam and evaluates intensities of the light of a plurality of individual wavelengths.

    Method for measuring the distance between a workpiece and a machining head of a laser machining apparatus

    公开(公告)号:US09770783B2

    公开(公告)日:2017-09-26

    申请号:US14814892

    申请日:2015-07-31

    摘要: According to a method for measuring the distance between a workpiece and a machining head of a laser machining apparatus, a machining head is provided, which has a housing that has an interior and an opening for emergence of the laser radiation from the machining head. The laser radiation is directed on to the workpiece, after it has passed through the interior and the opening. An object beam is directed on to the workpiece by a light source of an optical coherence tomograph in such a manner that the object beam passes through the interior and the opening before being incident upon the workpiece. In addition to the object beam, a measuring beam passes through the interior. The measuring beam is used to compensate falsifications of the measured distance that have been caused by pressure fluctuations in the interior. The measuring beam in this case may be reflected at a reflective face that is formed on an inner face of an outlet nozzle that comprises the opening, which inner face delimits the interior.

    Optical Measurement Device for Detecting Distance Differences and Optical Measurement Method
    9.
    发明申请
    Optical Measurement Device for Detecting Distance Differences and Optical Measurement Method 有权
    用于检测距离差的光学测量装置和光学测量方法

    公开(公告)号:US20140368830A1

    公开(公告)日:2014-12-18

    申请号:US14307481

    申请日:2014-06-17

    IPC分类号: G01B11/06

    摘要: The invention relates to an optical measuring device for acquiring in situ a difference in distance between a support and an edge region of an object to be measured. The optical measuring device has a measuring head with dual beam guide which directs a first measuring beam towards the support and a second measuring beam towards the edge region of the object to be measured. Means are provided for acquiring and forming reflection spectra of the first measuring beam which is directed towards the support and the second measuring beam which is directed towards the edge region of the object to be measured. The measuring device has a multi-channel measuring apparatus with one spectrometer line. An evaluation unit for the reflection spectra for acquiring the stage height between the support and the edge region of the object works together with a spectrometer and a display unit.

    摘要翻译: 本发明涉及一种光学测量装置,用于原位获取待测物体的支撑体与边缘区域之间的距离差。 光学测量装置具有测量头,其具有双光束引导件,其将第一测量光束朝向支撑件引导,而第二测量光束朝向待测量物体的边缘区域。 提供了用于获取和形成朝向支撑件的第一测量光束的反射光谱的装置和朝向被测量物体的边缘区域的第二测量光束。 测量装置具有多通道测量装置,具有一个光谱仪线。 用于获取载体和物体的边缘区域之间的台阶高度的反射光谱的评估单元与光谱仪和显示单元一起工作。

    CHROMATIC CONFOCAL MEASURING DEVICE
    10.
    发明公开

    公开(公告)号:US20230417533A1

    公开(公告)日:2023-12-28

    申请号:US18002181

    申请日:2021-06-10

    IPC分类号: G01B9/02015

    CPC分类号: G01B9/02015

    摘要: An optical measuring device includes a measuring head with an imaging optical unit and an evaluation unit, wherein the measuring head is connected to the evaluation unit by way of two light-guiding fibers, wherein the evaluation unit includes a light source whose light is guided through the first light-guiding fiber into the measuring head and wherein light reflected by the measurement object is guided back through the measuring head and into a second light-guiding fiber by means of a beam splitter, in such a way that outgoing and returning light are separated, wherein the fiber ends are in mutually conjugate positions, wherein the beam splitter and the fiber ends are arranged together in a connector that is separably connected to the measuring head.