Invention Grant
US09298081B2 Scattering enhanced thin absorber for EUV reticle and a method of making
有权
用于EUV掩模版的散射增强型薄吸收器及其制造方法
- Patent Title: Scattering enhanced thin absorber for EUV reticle and a method of making
- Patent Title (中): 用于EUV掩模版的散射增强型薄吸收器及其制造方法
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Application No.: US13790727Application Date: 2013-03-08
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Publication No.: US09298081B2Publication Date: 2016-03-29
- Inventor: Lei Sun , Obert Reeves Wood, II
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G02B5/20 ; G02B5/22 ; G02B5/02
Abstract:
A scattering enhanced thin absorber for a EUV reticle and a method of making thereof is disclosed. Embodiments include forming a multilayer on the upper surface of a substrate, forming a capping layer over the multilayer, forming one or more diffuse scattering layers over the capping layer, and etching the diffuse scattering layers to form a stack.
Public/Granted literature
- US20140254018A1 SCATTERING ENHANCED THIN ABSORBER FOR EUV REFLECTIVE RETICLE AND A METHOD OF MAKING Public/Granted day:2014-09-11
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