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1.发明授权公开(公告)号：US09435921B2
公开(公告)日：2016-09-06
申请号：US13958190
申请日：2013-08-02
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Lei Sun , Obert Reeves Wood, II
Abstract: A novel blazed grating spectral filter disclosed herein includes a multilayer stack of materials that is formed on a wedge-shaped substrate wherein the upper surface of the substrate is oriented at an angle relative the bottom surface of the substrate and wherein the angle corresponds to the blaze angle of the blazed grating filter. Various methods of forming such a filter are also disclosed such as, for example, performing a planarization process in a CMP tool to define the wedge-shaped substrate, thereafter forming the multilayer stack of materials above the upper planarized surface of the substrate and etching recesses into the multilayer stack.
Abstract translation: 本文公开的新型闪耀光栅光谱滤波器包括形成在楔形衬底上的多层材料堆叠，其中衬底的上表面相对于衬底的底表面以一定角度取向，并且其中该角度对应于火焰 闪光光栅滤光片的角度。 还公开了形成这种滤光器的各种方法，例如，在CMP工具中执行平坦化处理以限定楔形基板，之后在基板的上平面化表面上方形成多层堆叠的材料，并且蚀刻凹槽 进入多层堆叠。
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2.发明授权公开(公告)号：US09275449B2
公开(公告)日：2016-03-01
申请号：US13943253
申请日：2013-07-16
Applicant: GLOBALFOUNDRIES, Inc.
Inventor： Lei Sun , Obert Reeves Wood, II
CPC classification number: G06T7/0004 , G06T2207/10061 , G06T2207/20056 , G06T2207/30148
Abstract: A method of determining a dose-to-clear of a photoresist on a wafer includes providing an image of the wafer after the photoresist was exposed to a dose of energy and was developed, transforming the image of the wafer into frequency spectrum data, calculating an average frequency spectrum component of the frequency spectrum data, calculating a difference between the average frequency spectrum component and a noise average frequency spectrum component of a noise average frequency spectrum, and determining a dose-to-clear of the photoresist based on the difference between the average frequency spectrum component and the noise average frequency spectrum component.
Abstract translation: 确定晶片上的光致抗蚀剂的剂量清除的方法包括在光致抗蚀剂暴露于一定量的能量之后提供晶片的图像，并将其显影，将晶片的图像转换成频谱数据，计算 计算频谱数据的平均频谱分量，计算噪声平均频谱的平均频谱分量和噪声平均频谱分量之间的差，并且基于所述光谱的差异来确定光致抗蚀剂的剂量 - 平均频谱分量和噪声平均频谱分量。
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Patent Agency Ranking
公开(公告)号：US10468149B2
公开(公告)日：2019-11-05
申请号：US15424200
申请日：2017-02-03
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Yulu Chen , Francis Goodwin , Jed Rankin , Lei Sun , Obert Reeves Wood, II
IPC: G02B5/08 , G02B5/20 , F21V9/04 , F21V9/06 , G21K1/06 , G03F1/24 , G02B27/00 , G03F7/20 , G01M11/00
Abstract: Extreme ultraviolet mirrors and masks used in lithography and methods for manufacturing an extreme ultraviolet mirror or mask. Initial data is obtained that includes materials and optical properties for a first intermixed layer, a second intermixed layer, a first pure layer, and a second pure layer in each of a plurality of periods of a multi-layer stack for an optical element. For multiple thicknesses for the first pure layer and multiple thicknesses for the second pure layer, a reflectivity of the multi-layer stack is determined based on the initial data, a thickness received for the first intermixed layer, and a thickness received for the second intermixed layer. One of the thicknesses for the first pure layer and one of the thicknesses for the second pure layer are selected that maximize the reflectivity of the multi-layer stack.
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4.发明申请BLAZED GRATING SPECTRAL PURITY FILTER AND METHODS OF MAKING SUCH A FILTER 有权BLAZED GRATING SPECTRAL PURITY FILTER AND METHODS OF MAKEING SUCH A FILTER公开(公告)号：US20150036978A1
公开(公告)日：2015-02-05
申请号：US13958190
申请日：2013-08-02
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Lei Sun , Obert Reeves Wood, II
Abstract: A novel blazed grating spectral filter disclosed herein includes a multilayer stack of materials that is formed on a wedge-shaped substrate wherein the upper surface of the substrate is oriented at an angle relative the bottom surface of the substrate and wherein the angle corresponds to the blaze angle of the blazed grating filter. Various methods of forming such a filter are also disclosed such as, for example, performing a planarization process in a CMP tool to define the wedge-shaped substrate, thereafter forming the multilayer stack of materials above the upper planarized surface of the substrate and etching recesses into the multilayer stack.
Abstract translation: 本文公开的新型闪耀光栅光谱滤波器包括形成在楔形衬底上的多层材料堆叠，其中衬底的上表面相对于衬底的底表面以一定角度取向，并且其中该角度对应于火焰 闪光光栅滤光片的角度。 还公开了形成这种滤光器的各种方法，例如，在CMP工具中执行平坦化处理以限定楔形基板，之后在基板的上平面化表面上方形成多层堆叠的材料，并且蚀刻凹槽 进入多层堆叠。
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公开(公告)号：US20180226166A1
公开(公告)日：2018-08-09
申请号：US15424200
申请日：2017-02-03
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Yulu Chen , Francis Goodwin , Jed Rankin , Lei Sun , Obert Reeves Wood, II
CPC classification number: G21K1/062 , G01M11/005 , G02B5/085 , G02B5/0891 , G02B27/0012 , G03F1/24 , G03F7/70316 , G03F7/70958 , G21K2201/067
Abstract: Extreme ultraviolet mirrors and masks used in lithography and methods for manufacturing an extreme ultraviolet mirror or mask. Initial data is obtained that includes materials and optical properties for a first intermixed layer, a second intermixed layer, a first pure layer, and a second pure layer in each of a plurality of periods of a multi-layer stack for an optical element. For multiple thicknesses for the first pure layer and multiple thicknesses for the second pure layer, a reflectivity of the multi-layer stack is determined based on the initial data, a thickness received for the first intermixed layer, and a thickness received for the second intermixed layer. One of the thicknesses for the first pure layer and one of the thicknesses for the second pure layer are selected that maximize the reflectivity of the multi-layer stack.
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6.发明授权Method for a low profile etchable EUV absorber layer with embedded particles in a photolithography mask 有权在光刻掩模中具有嵌入颗粒的低轮廓可蚀刻的EUV吸收层的方法公开(公告)号：US09436078B2
公开(公告)日：2016-09-06
申请号：US14609588
申请日：2015-01-30
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Lei Sun , Obert Reeves Wood, II
Abstract: Methods for creating a EUV photolithography mask with a thinner highly EUV absorbing absorber layer and the resulting device are disclosed. Embodiments include forming a multilayer reflector (MLR); forming first and second layers of a first EUV absorbing material over the MLR, the second layer being between the first layer and the MLR; and implanting the first layer with particles of a second EUV absorbing material, wherein the first EUV absorbing material is etchable and has a lower EUV absorption coefficient than the second EUV absorbing material, and wherein the implanted particles are substantially separated from each other.
Abstract translation: 公开了用于制造具有较薄的高度EUV吸收层的EUV光刻掩模和所得到的器件的方法。 实施例包括形成多层反射器（MLR）; 在所述MLR上形成第一EUV吸收材料的第一层和第二层，所述第二层位于所述第一层和所述MLR之间; 以及用第二EUV吸收材料的颗粒注入所述第一层，其中所述第一EUV吸收材料是可蚀刻的并且具有比所述第二EUV吸收材料更低的EUV吸收系数，并且其中所述注入的颗粒彼此基本上分离。
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7.发明授权Scattering enhanced thin absorber for EUV reticle and a method of making 有权用于EUV掩模版的散射增强型薄吸收器及其制造方法公开(公告)号：US09298081B2
公开(公告)日：2016-03-29
申请号：US13790727
申请日：2013-03-08
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Lei Sun , Obert Reeves Wood, II
CPC classification number: G03F1/24 , G02B5/0242 , G02B5/208 , G02B5/22
Abstract: A scattering enhanced thin absorber for a EUV reticle and a method of making thereof is disclosed. Embodiments include forming a multilayer on the upper surface of a substrate, forming a capping layer over the multilayer, forming one or more diffuse scattering layers over the capping layer, and etching the diffuse scattering layers to form a stack.
Abstract translation: 公开了一种用于EUV掩模版的散射增强型薄吸收体及其制造方法。 实施例包括在衬底的上表面上形成多层，在多层上形成覆盖层，在覆盖层上形成一个或多个漫散射层，并蚀刻扩散散射层以形成叠层。
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