发明授权
- 专利标题: Overcoming variance in stacked capacitors
- 专利标题(中): 克服堆叠电容器的变化
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申请号: US13995140申请日: 2011-12-14
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公开(公告)号: US09299505B2公开(公告)日: 2016-03-29
- 发明人: Eric C. Hannah , Cary L. Pint , Charles W. Holzwarth , John L. Gustafson
- 申请人: Eric C. Hannah , Cary L. Pint , Charles W. Holzwarth , John L. Gustafson
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Blakely, Sokoloff, Taylor & Zafman LLP
- 国际申请: PCT/US2011/064969 WO 20111214
- 国际公布: WO2013/089710 WO 20130620
- 主分类号: H01G9/00
- IPC分类号: H01G9/00 ; H01G11/04 ; H01G11/12 ; H01G11/14 ; H01G11/24 ; H01G11/84 ; H01G13/00
摘要:
In one embodiment of the invention, a method of forming an energy storage device is described in which a porous structure of an electrically conductive substrate is measured in-situ while being electrochemically etched in an electrochemical etching bath until a predetermined value is obtained, at which point the electrically conductive substrate may be removed from the electrochemical etching bath. In another embodiment, a method of forming an energy storage device is described in which an electrically conductive porous structure is measured to determine the energy storage capacity of the electrically conductive porous structure. The energy storage capacity of the electrically conductive porous structure is then reduced until a predetermined energy storage capacity value is obtained.
公开/授权文献
- US20140036412A1 OVERCOMING VARIANCE IN STACKED CAPACITORS 公开/授权日:2014-02-06
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