发明授权
- 专利标题： Method for preparing semiconductor substrate with insulating buried layer gettering process
- 专利标题（中）： 半导体衬底制备绝缘埋层吸杂方法
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申请号： US13976486申请日： 2010-12-31
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公开(公告)号： US09299556B2公开(公告)日： 2016-03-29
- 发明人: Xing Wei , Zhongdang Wang , Fei Ye , Gongbai Cao , Chenglu Lin , Miao Zhang , Xi Wang
- 申请人： Xing Wei , Zhongdang Wang , Fei Ye , Gongbai Cao , Chenglu Lin , Miao Zhang , Xi Wang
- 申请人地址： CN Shanghai CN Shanghai
- 专利权人： SHANGHAI SIMGUI TECHNOLOGY CO. LTD.,SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
- 当前专利权人： SHANGHAI SIMGUI TECHNOLOGY CO. LTD.,SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
- 当前专利权人地址： CN Shanghai CN Shanghai
- 代理商 Mark M. Friedman
- 优先权： CN201010607936 20101227; CN201010608061 20101227
- 国际申请： PCT/CN2010/080599 WO 20101231
- 国际公布： WO2012/088710 WO 20120705
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/322 ; H01L21/762
摘要：
A method for preparing a semiconductor substrate with an buried insulating layer by a guttering process, includes the following steps: providing a device substrate and a supporting substrate; forming an insulating layer on a surface of the device substrate; performing a heating treatment on the device substrate, so as to form a denuded zone on the surface of the device substrate; bonding the device substrate having the insulating layer with the supporting substrate, such that the insulating layer is sandwiched between the device substrate and the supporting substrate; annealing and reinforcing a bonding interface, such that an adherence level of the bonding interface meets requirements in the following chamfering grinding, thinning and polishing processes; performing the chamfering grinding, thinning and polishing processes on the device substrate which is bonded.
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