Invention Grant
US09299561B2 Method for fabricating nitride semiconductor thin film and method for fabricating nitride semiconductor device using the same
有权
氮化物半导体薄膜的制造方法及使用其的氮化物半导体器件的制造方法
- Patent Title: Method for fabricating nitride semiconductor thin film and method for fabricating nitride semiconductor device using the same
- Patent Title (中): 氮化物半导体薄膜的制造方法及使用其的氮化物半导体器件的制造方法
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Application No.: US14250070Application Date: 2014-04-10
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Publication No.: US09299561B2Publication Date: 2016-03-29
- Inventor: Keon Hun Lee , Min Ho Kim , Jong Uk Seo , Suk Ho Yoon , Kee Won Lee , Sang Don Lee , Ho Chul Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2013-0068397 20130614
- Main IPC: H01L33/02
- IPC: H01L33/02 ; H01L21/02 ; H01L33/00 ; H01L33/22
Abstract:
A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.
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