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    Method of fabricating nitride semiconductor light emitting device
    2.
    发明授权
    Method of fabricating nitride semiconductor light emitting device 有权
    制造氮化物半导体发光器件的方法

    公开(公告)号：US09209349B2

    公开(公告)日：2015-12-08

    申请号：US14184171

    申请日：2014-02-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kee Won Lee ,  Jong Uk Seo ,  Suk Ho Yoon ,  Keon Hun Lee ,  Sang Don Lee

    IPC: H01L21/00 ,  H01L33/00 ,  H01L21/02 ,  H01L33/32 ,  H01L33/12 ,  H01L33/16

    CPC classification number: H01L33/007 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32

    Abstract: A method of fabricating a nitride semiconductor light emitting device is provided. The method includes growing a first group-III-nitride semiconductor layer on a substrate, the first group-III-nitride semiconductor layer having a top surface formed as a group-III-rich surface exhibiting a group-III-polarity and a bottom surface formed as a N-rich surface exhibiting a N-polarity. The method further includes selectively etching a N-polarity region in the top surface of the first group III nitride semiconductor layer, forming a second group III nitride semiconductor layer on the first group III nitride semiconductor layer to fill the etched N-polarity region and forming a light emitting structure including first and second conductivity type nitride semiconductor layers and an active layer on the second group III nitride semiconductor layer.

    Abstract translation: 提供一种制造氮化物半导体发光器件的方法。 该方法包括在衬底上生长第一III族氮化物半导体层，第一III族氮化物半导体层具有形成为具有III族极性的III族富集表面的顶表面和底表面 形成为呈现N极性的富N的表面。 该方法还包括选择性地蚀刻第一III族氮化物半导体层的顶表面中的N极区域，在第一III族氮化物半导体层上形成第二III族氮化物半导体层以填充蚀刻的N极区域并形成 包括第一和第二导电型氮化物半导体层的发光结构和在第二III族氮化物半导体层上的有源层。

    Method of fabricating semiconductor light emitting device
    3.
    发明授权
    Method of fabricating semiconductor light emitting device 有权
    制造半导体发光器件的方法

    公开(公告)号：US09502605B2

    公开(公告)日：2016-11-22

    申请号：US14714223

    申请日：2015-05-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sang Heon Han ,  Dong Yul Lee ,  Seung Hyun Kim ,  Jang Mi Kim ,  Suk Ho Yoon ,  Sang Jun Lee

    IPC: H01L33/00 ,  H01L33/06

    CPC classification number: H01L33/0075 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

    Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

    Abstract translation: 一种制造半导体发光器件的方法包括：形成第一导电型半导体层，通过在第一导电型半导体层上交替地形成多个量子阱层和多个量子势垒层来形成有源层，并形成第二导电型半导体层 导电型半导体层。 多个量子势垒层包括与第一导电类型半导体层相邻的至少一个第一量子势垒层和与第二导电类型半导体层相邻的至少一个第二量子势垒层。 活性层的形成包括允许至少一个第一量子势垒层在第一温度下生长并允许至少一个第二量子势垒层在低于第一温度的第二温度下生长。

    Semiconductor light emitting device
    4.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US09018618B1

    公开(公告)日：2015-04-28

    申请号：US14526274

    申请日：2014-10-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jong Hyun Lee ,  Ki Ho Park ,  Suk Ho Yoon ,  Sang Heon Han ,  Jae Sung Hyun

    IPC: H01L29/06 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

    CPC classification number: H01L33/06 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01S5/0224 ,  H01S5/042 ,  H01S5/3408 ,  H01S5/34333 ,  H01L2924/00014

    Abstract: There is provided a semiconductor light emitting device including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, and including a plurality of alternately stacked quantum barrier layers and quantum well layers, wherein at least a portion of the plurality of quantum well layers has different thicknesses, wherein a thickness of a first quantum well layer most adjacent to the p-type semiconductor layer is less than a thickness of a second quantum well layer adjacent thereto and greater than a thickness of a third quantum well layer, other than the first and second quantum well layers.

    Abstract translation: 提供一种半导体发光器件，包括：n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间的有源层，并且包括多个交替层叠的量子势垒层和量子阱层，其中所述多个量子阱层的至少一部分具有不同的厚度 其中与p型半导体层最相邻的第一量子阱层的厚度小于与其相邻的第二量子阱层的厚度，并且大于第三量子阱层的厚度，除了第一和第二 量子阱层。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号：US20130221398A1

    公开(公告)日：2013-08-29

    申请号：US13774376

    申请日：2013-02-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Bum Joon Kim ,  Young Sun Kim ,  Suk Ho Yoon ,  Ki Sung Kim ,  Dong Chul Shin

    IPC: H01L33/62

    CPC classification number: H01L33/62 ,  H01L33/145 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor light emitting device includes a conductive substrate, a light emitting structure, a first contact layer, a conductive via and a current interruption region. The light emitting structure is disposed on the conductive substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The first contact layer is disposed between the conductive substrate and the first conductive semiconductor layer. The conductive via is disposed to extend from the conductive substrate to be connected to the second conductive semiconductor layer. The current interruption region is disposed in a region adjacent to the conductive via in the light emitting structure.

    Abstract translation: 半导体发光器件包括导电衬底，发光结构，第一接触层，导电通孔和电流中断区域。 发光结构设置在导电基板上，并且包括第一导电半导体层，有源层和第二导电半导体层。 第一接触层设置在导电基板和第一导电半导体层之间。 导电通孔设置成从导电基板延伸以连接到第二导电半导体层。 电流中断区域设置在发光结构中与导电通孔相邻的区域中。

    Chemical vapor deposition apparatus
    6.
    发明授权
    Chemical vapor deposition apparatus 有权
    化学气相沉积装置

    公开(公告)号：US09410247B2

    公开(公告)日：2016-08-09

    申请号：US13655696

    申请日：2012-10-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jong Hyun Lee ,  Hyun Seok Ryu ,  Jung Hyun Lee ,  Ki Sung Kim ,  Suk Ho Yoon ,  Young Sun Kim

    IPC: C23C16/455 ,  C23C16/458 ,  H01L21/02

    CPC classification number: C23C16/45565 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/4583 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262

    Abstract: A chemical vapor deposition apparatus can include a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers. The gas supplying part can include a plurality of gas pipes disposed in the reaction chamber to supply the two or more reaction gases from outside to the reaction space; and a plurality of supplying pipes disposed around the wafer boat, wherein each of the supplying pipes is connected to two or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the two or more reaction gases supplied by the two or more corresponding gas pipes to a corresponding one of the wafers.

    Abstract translation: 化学气相沉积装置可以包括其中具有反应空间的反应室; 设置在所述反应空间中的晶片舟，所述晶片舟被布置和构造为支撑多个晶片; 以及设置在所述反应室中以将多个反应气体供应到所述多个晶片的气体供给部。 气体供给部可以包括设置在反应室中的多个气体管道，用于从外部向反应空间供给两种或更多种反应气体; 以及设置在所述晶片舟周围的多个供给管，其中，所述供给管中的每一个连接到两个以上对应的气体管，并且其中每个供给管被构造成供给由所述两个或更多个相应的 将气体管道连接到相应的一个晶片。

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