公开(公告)号：US09209349B2

公开(公告)日：2015-12-08

申请号：US14184171

申请日：2014-02-19

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Kee Won Lee ,  Jong Uk Seo ,  Suk Ho Yoon ,  Keon Hun Lee ,  Sang Don Lee

IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L21/02 ,  H01L33/32 ,  H01L33/12 ,  H01L33/16

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32

摘要： A method of fabricating a nitride semiconductor light emitting device is provided. The method includes growing a first group-III-nitride semiconductor layer on a substrate, the first group-III-nitride semiconductor layer having a top surface formed as a group-III-rich surface exhibiting a group-III-polarity and a bottom surface formed as a N-rich surface exhibiting a N-polarity. The method further includes selectively etching a N-polarity region in the top surface of the first group III nitride semiconductor layer, forming a second group III nitride semiconductor layer on the first group III nitride semiconductor layer to fill the etched N-polarity region and forming a light emitting structure including first and second conductivity type nitride semiconductor layers and an active layer on the second group III nitride semiconductor layer.

摘要翻译： 提供一种制造氮化物半导体发光器件的方法。 该方法包括在衬底上生长第一III族氮化物半导体层，第一III族氮化物半导体层具有形成为具有III族极性的III族富集表面的顶表面和底表面 形成为呈现N极性的富N的表面。 该方法还包括选择性地蚀刻第一III族氮化物半导体层的顶表面中的N极区域，在第一III族氮化物半导体层上形成第二III族氮化物半导体层以填充蚀刻的N极区域并形成 包括第一和第二导电型氮化物半导体层的发光结构和在第二III族氮化物半导体层上的有源层。

公开(公告)号：US09698304B2

公开(公告)日：2017-07-04

申请号：US14979869

申请日：2015-12-28

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Chul Min Kim ,  Tan Sakong ,  Suk Ho Yoon ,  Keon Hun Lee ,  Do Young Rhee ,  Sang Don Lee

IPC分类号： H01L33/06 ,  H01L33/14 ,  H01L25/16 ,  H05B33/08 ,  H01L33/32

CPC分类号： H01L33/145 ,  H01L25/167 ,  H01L33/06 ,  H01L33/32 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H05B33/0872 ,  H01L2924/00012 ,  H01L2924/00

摘要： A lighting system includes a lighting unit comprising at least one lighting device, a sensing unit configured to measure at least one of atmospheric temperature and humidity, a controlling unit configured to compare the at least one of the temperature and the humidity measured by the sensor unit with set values and determine a color temperature of the lighting unit as a result of the comparison, and a driving unit configured to drive to the lighting unit to have the determined color temperature.

公开(公告)号：US09299561B2

公开(公告)日：2016-03-29

申请号：US14250070

申请日：2014-04-10

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Keon Hun Lee ,  Min Ho Kim ,  Jong Uk Seo ,  Suk Ho Yoon ,  Kee Won Lee ,  Sang Don Lee ,  Ho Chul Lee

IPC分类号： H01L33/02 ,  H01L21/02 ,  H01L33/00 ,  H01L33/22

CPC分类号： H01L21/0254 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02576 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/22

摘要： A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.

摘要翻译： 制造氮化物半导体薄膜的方法包括制备掺杂有n型杂质的第一氮化物单晶层。 通过向其施加蚀刻气体，在第一氮化物单晶层的表面上形成多个蚀刻坑。 在其上形成有蚀刻坑的第一氮化物单晶层上生长第二氮化物单晶层。

公开(公告)号：US09252327B1

公开(公告)日：2016-02-02

申请号：US14698575

申请日：2015-04-28

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Chul Min Kim ,  Tan Sakong ,  Suk Ho Yoon ,  Keon Hun Lee ,  Do Young Rhee ,  Sang Don Lee

IPC分类号： H01L29/207 ,  H01L33/14 ,  H01L33/32 ,  H01L33/46

CPC分类号： H01L33/145 ,  H01L25/167 ,  H01L33/06 ,  H01L33/32 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H05B33/0872 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor light emitting device may include: a first conductivity type semiconductor layer; an active layer disposed on the first conductivity type semiconductor layer; an electron-blocking layer disposed on the active layer; a second conductivity type semiconductor layer disposed on the electron-blocking layer; and a hole-diffusion layer disposed between the electron-blocking layer and the second conductivity type semiconductor layer. The hole-diffusion layer may include three layers having different energy band gaps and different resistance levels and at least one of the three layers may contain Al. A composition of the Al may be lower in the at least one layer than in the electron-blocking layer.

摘要翻译： 半导体发光器件可以包括：第一导电类型半导体层; 设置在所述第一导电类型半导体层上的有源层; 设置在有源层上的电子阻挡层; 设置在电子阻挡层上的第二导电类型半导体层; 以及设置在电子阻挡层和第二导电类型半导体层之间的空穴扩散层。 空穴扩散层可以包括具有不同能带隙和不同电阻水平的三层，三层中的至少一层可以含有Al。 所述Al的组成在所述至少一层中比在所述电子阻挡层中低。