Devices and methods of forming an integrated circuit and a FinFET device with a planarized permanent layer are provided. In an embodiment, a method of forming a planarized permanent layer includes providing a base substrate that has an uneven surface topography. A permanent layer is conformally formed over the base substrate. The permanent layer includes raised portions and sunken portions that correspond to the surface topography of the base substrate. A sacrificial layer is conformally formed over the permanent layer. The sacrificial layer and the raised portions of the permanent layer are chemical-mechanical planarized to provide the planarized permanent layer. The sacrificial layer is substantially completely removed after chemical-mechanical planarizing.