发明授权
- 专利标题： Integrated circuits having magnetic tunnel junctions (MTJ) and methods for fabricating the same
- 专利标题（中）： 具有磁隧道结（MTJ）的集成电路及其制造方法
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申请号： US14272916申请日： 2014-05-08
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公开(公告)号： US09299745B2公开(公告)日： 2016-03-29
- 发明人: Xunyuan Zhang , Sean Xuan Lin , Kunaljeet Tanwar
- 申请人： GLOBALFOUNDRIES, Inc.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES, INC.
- 当前专利权人： GLOBALFOUNDRIES, INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Ingrassia Fisher & Lorenz, P.C.
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L27/22 ; H01L43/12 ; H01L43/08 ; H01L43/02
摘要：
Integrated circuits with magnetic tunnel junction (MTJ) structures and methods for fabricating integrated circuits with MTJ structures are provided. An exemplary method for fabricating an integrated circuit includes forming a first conductive line in electrical connection with an underlying semiconductor device. The method exposes a surface of the first conductive line. Further, the method selectively deposits a conductive material on the surface of the first conductive line to form an electrode contact. The method includes forming a MTJ structure over the electrode contact.
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