发明授权
- 专利标题： Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structure
- 专利标题（中）： 含有外延钙钛矿/掺杂钛酸锶结构的半导体器件
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申请号： US14300835申请日： 2014-06-10
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公开(公告)号： US09299799B2公开(公告)日： 2016-03-29
- 发明人: Catherine A. Dubourdieu , Martin M. Frank , Vijay Narayanan
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L29/51
- IPC分类号： H01L29/51 ; H01L29/49 ; H01L21/28
摘要：
Semiconductor devices are provided such as, ferroelectric transistors and floating gate transistors, that include an epitaxial perovskite/doped strontium titanate structure formed above a surface of a semiconductor substrate. The epitaxial perovskite/doped strontium titanate structure includes a stack of, in any order, a doped strontium titanate and a perovskite type oxide.
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