A vertical transistor component includes a semiconductor body with first and second surfaces, a drift region, and a source region and body region arranged between the drift region and the first surface. The body region is also arranged between the source region and the drift region. The vertical transistor component further includes a gate electrode arranged adjacent to the body zone, a gate dielectric arranged between the gate electrode and the body region, and a drain region arranged between the drift region and the second surface. A source electrode electrically contacts the source region, is electrically insulated from the gate electrode and arranged on the first surface. A drain electrode electrically contacts the drain region and is arranged on the second surface. A gate contact electrode is electrically insulated from the semiconductor body, extends in the semiconductor body to the second surface, and is electrically connected with the gate electrode.