Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US14078701Application Date: 2013-11-13
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Publication No.: US09299843B2Publication Date: 2016-03-29
- Inventor: Jun-Jie Wang , Po-Chao Tsao , Ming-Te Wei , Shih-Fang Tzou
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66

Abstract:
A semiconductor structure comprises a substrate, a plurality of fins, an oxide layer and a gate structure. The fins protrude from the substrate and are separated from each other by the oxide layer. The surface of the oxide layer is uniform and even plane. The gate structure is disposed on the fins. The fin height is distance between the top of the fins and the oxide layer, and at least two of the fins have different fin heights.
Public/Granted literature
- US20150129980A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-05-14
Information query
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