Invention Grant
- Patent Title: Optoelectronic semiconductor chip having a plurality of active regions arranged alongside one another
- Patent Title (中): 具有彼此并排设置的多个有源区的光电子半导体芯片
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Application No.: US14428333Application Date: 2013-09-19
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Publication No.: US09299897B2Publication Date: 2016-03-29
- Inventor: Lutz Höppel , Alexander F. Pfeuffer
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater & Matsil, L.L.P.
- Priority: DE102012108879 20120920
- International Application: PCT/EP2013/069472 WO 20130919
- International Announcement: WO2014/044752 WO 20140327
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/56 ; H01L33/08 ; H01L33/40 ; H01L33/60 ; H01L27/15 ; H01L33/44

Abstract:
An optoelectronic semiconductor chip is disclosed. The optoelectronic semiconductor chip includes a semiconductor layer sequence having an active zone suitable for emitting radiation, a carrier substrate, and a mirror layer, the mirror layer being arranged between the semiconductor layer sequence and the carrier substrate, wherein the semiconductor layer sequence is subdivided into a plurality of active regions arranged alongside one another, wherein the plurality of active regions are separated from one another in each case by a trench in the semiconductor layer sequence, wherein the trench in each case severs the semiconductor layer sequence and the mirror layer, wherein the mirror layer has side surfaces facing a trench and side surfaces facing an outer side of the semiconductor chip, wherein the side surfaces of the mirror layer that face an outer side of the semiconductor chip have a metallic encapsulation layer.
Public/Granted literature
- US20150270458A1 Optoelectronic Semiconductor Chip Having a Plurality of Active Regions Arranged Alongside One Another Public/Granted day:2015-09-24
Information query
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