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1.发明授权公开(公告)号：US11316068B2
公开(公告)日：2022-04-26
申请号：US16316973
申请日：2017-07-12
摘要： An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment, a chip includes a semiconductor body comprising a plurality of emission regions, first and second contact points, a rewiring structure and first and second connection points, wherein each emission region is contacted via the first and second contact points and configured to be operated separately from one another, wherein the rewiring structure electrically conductively connects each first contact point to an associated first connection point, wherein the rewiring structure electrically conductively connects every second contact point to an associated second connection point, wherein at least one of the connection points does not overlap with a contact point which is electrically conductively connected to this connection point in a vertical direction, and wherein each first connection point is disposed laterally directly adjacent to a further first connection point.
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公开(公告)号：US11018283B2
公开(公告)日：2021-05-25
申请号：US16335632
申请日：2017-10-25
摘要： A method of producing optoelectronic semiconductor components including providing a primary light source having a carrier and a semiconductor layer sequence mounted thereon that generates primary light (B), wherein the semiconductor layer sequence is structured into a plurality of pixels that can be driven electrically independently of each other, and the carrier includes a plurality of control units that drive the pixels, providing at least one conversion unit adapted to convert the primary light (B) into at least one secondary light (G, R), wherein the conversion unit is grown continuously from at least one semiconductor material, structuring the conversion unit, wherein portions of the semiconductor material are removed in accordance with the pixels, and applying the conversion unit to the semiconductor layer sequence so that the remaining semiconductor material is uniquely assigned to a portion of the pixels.
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公开(公告)号：US10453989B2
公开(公告)日：2019-10-22
申请号：US15552259
申请日：2016-02-15
发明人： Lutz Hoeppel , Alexander F. Pfeuffer , Dominik Scholz , Isabel Otto , Norwin Von Malm , Stefan Illek
摘要： Disclosed is a method for producing a plurality of semiconductor chips (10). A composite (1), which comprises a carrier (4) and a semiconductor layer sequence (2, 3), is provided. Separating trenches (17) are formed in the semiconductor layer sequence (2, 3) along an isolation pattern (16). A filling layer (11) limiting the semiconductor layer sequence (2, 3) toward the separating trenches (17) is applied to a side of the semiconductor layer sequence (2, 3) facing away from the carrier (4). Furthermore, a metal layer (10) adjacent to the filling layer (11) is applied in the separating trenches (17). The semiconductor chips (20) are isolated by removing the metal layer (10) adjacent to the filling layer (11) in the separating trenches (17). Each isolated semiconductor chip (20) has one part of the semiconductor layer sequence (2, 3), and of the filling layer (11). Also disclosed is a semiconductor chip (10).
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公开(公告)号：US10074766B2
公开(公告)日：2018-09-11
申请号：US15119376
申请日：2015-02-17
IPC分类号： H01L31/18 , H01L31/0224 , H01L33/00 , H01L33/38 , H01L31/0352 , H01L31/0693 , H01L31/0735 , H01L31/056 , H01L23/544 , H01L31/0304 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/42
CPC分类号： H01L31/1892 , H01L21/76898 , H01L23/544 , H01L31/02245 , H01L31/022466 , H01L31/03046 , H01L31/03048 , H01L31/035236 , H01L31/035281 , H01L31/056 , H01L31/0693 , H01L31/0735 , H01L31/186 , H01L33/0079 , H01L33/0095 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/382 , H01L33/42 , H01L2223/5446 , H01L2933/0016 , Y02E10/52 , Y02E10/544 , Y02P70/521
摘要： A method for producing a plurality of semiconductor components (1) is provided, comprising the following steps: a) providing a semiconductor layer sequence (2) having a first semiconductor layer (21), a second semiconductor layer (22) and an active region (25), said active region being arranged between the first semiconductor layer and the second semiconductor layer for generating and/or receiving radiation; b) forming a first connection layer (31) on the side of the second connection layer facing away from the first semiconductor layer; c) forming a plurality of cut-outs (29) through the semiconductor layer sequence; d) forming a conducting layer (4) in the cut-outs for establishing an electrically conductive connection between the first semiconductor layer and the first connection layer; and e) separating into the plurality of semiconductor components, wherein a semiconductor body (20) having at least one of the plurality of cut-outs arises from the semiconductor layer sequence for each semiconductor component and the at least one cut-out is completely surrounded by the semiconductor body in a top view of the semiconductor body. Furthermore, a semiconductor component is provided.
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公开(公告)号：US09859330B2
公开(公告)日：2018-01-02
申请号：US14433379
申请日：2013-09-30
IPC分类号： H01L29/18 , H01L27/15 , H01L25/075 , H01L29/66 , H01L29/78 , H01L33/00 , H01L33/12 , H01L33/50
CPC分类号： H01L27/156 , H01L25/0753 , H01L29/66568 , H01L29/78 , H01L33/007 , H01L33/12 , H01L33/507 , H01L2924/0002 , H01L2933/0041 , H01L2933/0091 , H01L2924/00
摘要： In at least one embodiment, the method is designed for producing a light-emitting diode display (1). The method comprises the following steps: •A) providing a growth substrate (2); •B) applying a buffer layer (4) directly or indirectly onto a substrate surface (20); •C) producing a plurality of separate growth points (45) on or at the buffer layer (4); •D) producing individual radiation-active islands (5), originating from the growth points (45), wherein the islands (5) each comprise an inorganic semiconductor layer sequence (50) with at least one active zone (55) and have a mean diameter, when viewed from above onto the substrate surface (20), between 50 nm and 20 μm inclusive; and •E) connecting the islands (5) to transistors (6) for electrically controlling the islands (5).
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公开(公告)号：US09735319B2
公开(公告)日：2017-08-15
申请号：US14987905
申请日：2016-01-05
IPC分类号： H01L33/44 , H01L33/18 , H01L33/24 , H01L27/15 , H01L33/60 , H01L33/14 , H01L33/20 , H01L33/32 , H01L33/08 , H01L33/22 , H01L33/42 , H01L33/46
CPC分类号： H01L33/44 , H01L27/156 , H01L33/08 , H01L33/14 , H01L33/18 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/42 , H01L33/46 , H01L33/60
摘要： An optoelectronic semiconductor chip includes a multiplicity of active regions arranged at a distance from one another, and a continuous current spreading layer, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the current spreading layer covers all cover layers of the active region.
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公开(公告)号：US09698316B2
公开(公告)日：2017-07-04
申请号：US15100062
申请日：2015-01-20
发明人： Britta Göötz , Ion Stoll , Alexander F. Pfeuffer , Dominik Scholz , Isabel Otto
CPC分类号： H01L33/502 , C23C28/00 , C23C28/32 , C23C28/345 , C23F1/02 , C23F1/14 , C25D13/02 , C25D13/12 , C25D13/22 , H01L33/504 , H01L2933/0041
摘要： A method for producing a laterally structured phosphor layer and an optoelectronic component comprising such a phosphor layer are disclosed. In an embodiment the method includes providing a carrier having a first electrically conductive layer at a carrier top side, applying an insulation layer to the first electrically conductive layer and a second electrically conductive layer to the insulation layer, etching the second electrically conductive layer and the insulation layer, wherein the first electrically conductive layer is maintained as a continuous layer. The method further includes applying a voltage to the first electrically conductive layer and electrophoretically coating the first electrically conductive layer with a first material, and applying a voltage to the second electrically conductive layer and electrophoretically coating the second electrically conductive layer with a second material.
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8.发明授权公开(公告)号：US09397268B2
公开(公告)日：2016-07-19
申请号：US14420883
申请日：2013-08-01
IPC分类号： H01L33/46 , H01L31/0232 , H01L31/0304 , H01L31/18 , H01L33/32
CPC分类号： H01L33/46 , H01L31/02327 , H01L31/03044 , H01L31/18 , H01L33/32 , H01L2933/0025
摘要： A method for manufacturing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment the component comprises a semiconductor body having a main surface and a mirror region adjoining the main surface of the semiconductor body at least regionally, wherein the minor region has a plurality of domains of a first material composition, the domains being spaced apart from one another and adjoining the main surface, wherein the mirror region comprises a continuous mirror layer of a second material composition, and wherein the mirror layer adjoins the main surface at least regionally between the domains.
摘要翻译： 公开了一种制造光电子半导体部件和光电半导体部件的方法。 在一个实施例中，该部件包括半导体本体，其具有至少区域上具有与半导体本体的主表面邻接的主表面和反射镜区域，其中该次要区域具有多个第一材料组成的区域，该区域与 彼此相邻并邻接主表面，其中所述镜区域包括第二材料组合物的连续镜层，并且其中所述镜层至少在所述域之间区域邻接所述主表面。
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9.发明授权Optoelectronic semiconductor chip having a plurality of active regions arranged alongside one another 有权具有彼此并排设置的多个有源区的光电子半导体芯片公开(公告)号：US09299897B2
公开(公告)日：2016-03-29
申请号：US14428333
申请日：2013-09-19
发明人： Lutz Höppel , Alexander F. Pfeuffer
CPC分类号： H01L33/56 , H01L27/156 , H01L33/0016 , H01L33/08 , H01L33/405 , H01L33/44 , H01L33/60
摘要： An optoelectronic semiconductor chip is disclosed. The optoelectronic semiconductor chip includes a semiconductor layer sequence having an active zone suitable for emitting radiation, a carrier substrate, and a mirror layer, the mirror layer being arranged between the semiconductor layer sequence and the carrier substrate, wherein the semiconductor layer sequence is subdivided into a plurality of active regions arranged alongside one another, wherein the plurality of active regions are separated from one another in each case by a trench in the semiconductor layer sequence, wherein the trench in each case severs the semiconductor layer sequence and the mirror layer, wherein the mirror layer has side surfaces facing a trench and side surfaces facing an outer side of the semiconductor chip, wherein the side surfaces of the mirror layer that face an outer side of the semiconductor chip have a metallic encapsulation layer.
摘要翻译： 公开了一种光电半导体芯片。 光电子半导体芯片包括具有适于发射辐射的有源区的半导体层序列，载体衬底和镜像层，镜层布置在半导体层序列和载体衬底之间，其中半导体层序列被细分为 多个有源区域彼此并排布置，其中多个有源区域在每种情况下都分别由半导体层序列中的沟槽分开，其中沟槽在每种情况下都分开半导体层序列和镜面层，其中 镜层具有面向沟槽的侧表面和面向半导体芯片的外侧的侧表面，其中面对半导体芯片的外侧的镜面层的侧表面具有金属封装层。
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10.发明授权公开(公告)号：US11069663B2
公开(公告)日：2021-07-20
申请号：US16468085
申请日：2018-01-12
发明人： Andreas Plößl , Siegfried Herrmann , Martin Rudolf Behringer , Frank Singer , Thomas Schwarz , Alexander F. Pfeuffer
IPC分类号： H01L25/075 , H01L33/62 , H01L33/00
摘要： A method of producing an optoelectronic semiconductor component includes A) providing at least three source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chips, B) providing a target substrate having a mounting plane configured to mount the semiconductor chips thereto, C) forming platforms on the target substrate, and D) transferring at least some of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips transferred to the target substrate maintain their relative position with respect to one another, within the types of semiconductor chips, wherein on the target substrate the semiconductor chips of each type of semiconductor chips have a specific height above the mounting plane due to the platforms so that the semiconductor chips of different types of semiconductor chips have different heights.
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