Invention Grant
US09301383B2 Low electron temperature, edge-density enhanced, surface wave plasma (SWP) processing method and apparatus
有权
低电子温度，边缘密度增强，表面波等离子体（SWP）处理方法和装置
- Patent Title: Low electron temperature, edge-density enhanced, surface wave plasma (SWP) processing method and apparatus
- Patent Title (中): 低电子温度，边缘密度增强，表面波等离子体（SWP）处理方法和装置
-
Application No.: US13829959Application Date: 2013-03-14
-
Publication No.: US09301383B2Publication Date: 2016-03-29
- Inventor: Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood, Herron & Evans, LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; H05H1/46 ; H01F41/06 ; H01L21/3065 ; H01J37/32
Abstract:
A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.
Public/Granted literature
Information query
IPC分类:
