发明授权
US09303319B2 Gas injection system for chemical vapor deposition using sequenced valves
有权
使用顺序阀进行化学气相沉积的气体注入系统
- 专利标题: Gas injection system for chemical vapor deposition using sequenced valves
- 专利标题(中): 使用顺序阀进行化学气相沉积的气体注入系统
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申请号: US12972270申请日: 2010-12-17
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公开(公告)号: US09303319B2公开(公告)日: 2016-04-05
- 发明人: William E. Quinn , Eric A. Armour
- 申请人: William E. Quinn , Eric A. Armour
- 申请人地址: US NY Plainview
- 专利权人: Veeco Instruments Inc.
- 当前专利权人: Veeco Instruments Inc.
- 当前专利权人地址: US NY Plainview
- 代理机构: Rauschenbach Patent Law Group, LLC
- 代理商 Kurt Rauschenbach
- 主分类号: C23C16/455
- IPC分类号: C23C16/455 ; C23C16/52
摘要:
A gas injection system for a chemical vapor deposition system includes a gas manifold comprising a plurality of valves where each of the plurality of valves has an input that is coupled to a process gas source and an output for providing process gas. Each of a plurality of gas injectors has an input that is coupled to the output of one of the plurality of valves and an output that is positioned in one of a plurality of zones in a chemical vapor deposition reactor. A controller having a plurality of outputs where each of the plurality of outputs is coupled to a control input of one of the plurality of valves. The controller instructs at least some of the plurality of valves to open at predetermined times to provide a desired gas flow to each of the plurality of zones in the chemical vapor deposition reactor.
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